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Simple meso-scale capacitor structures have been made by incorporating thin (~300 nm) single crystal lamellae of KTiOPO4 (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised "hot-spots," caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future. [ABSTRACT FROM AUTHOR]

The standard "Kittel Law" for the thickness and shape of ferroelectric, ferroelastic, or ferromagnet domains assumes mechanical equilibrium. The present paper shows that such domains may be highly nonequilibrium, with unusual thicknesses and shapes. In lead germanate and multiferroic lead zirconate titanate iron tantalate domain wall instabilities resemble hydrodynamics (Richtmyer-Meshkov and Helfrich-Hurault, respectively). [ABSTRACT FROM AUTHOR]

This article compares and contrasts information obtained, using transmission electron microscopy (TEM) and piezo-force microscopy (PFM), on domain configurations adopted in single crystal lamellae of BaTiO3, that had been cut directly from bulk using a focused ion beam microscope with top and bottom surfaces parallel to {100}pseudocubic. Both forms of imaging reveal domain walls parallel to {110}pseudocubic, consistent with sets of 90° domains with dipoles oriented parallel to the two <001>pseudocubic directions in the plane of the lamellae. However, the domain width was observed to be dramatically larger using PFM than it was using TEM. This suggests significant differences in the surface energy densities that drive the domain formation in the first place, that could relate to differences in the boundary conditions in the two modes of imaging (TEM samples are imaged under high vacuum, whereas PFM imaging was performed in air). Attempts were made to map local dipole orientations directly, using a form of ‘vector’ PFM. However, information inferred was largely inconsistent with the known crystallography of the samples, raising concern about the levels of care needed for accurate interpretation of PFM images. [ABSTRACT FROM AUTHOR]

This paper summarises some of the most recent work that has been done on nanoscale ferroelectrics as a result of a joint collaborative research effort involving groups in Queen's University Belfast, the University of Cambridge and the University of St. Andrews. Attempts have been made to observe fundamental effects of reduced size, and increasing morphological complexity, on ferroelectric behaviour by studying the functional response and domain characteristics in nanoscale single crystal material, whose size and morphology have been defined by Focused Ion Beam (FIB) patterning. This approach to nanoshape fabrication has allowed the following broad statements to be made: (i) in single crystal BaTiO3 sheets, permittivity and phase transition behaviour is not altered from that of bulk material down to a thickness of ∼ 75 nm; (ii) in single crystal BaTiO3 sheets and nanowires changes in observed domain morphologies are consistent with large scale continuum modeling. [ABSTRACT FROM AUTHOR]

The focused ion beam microscope (FIB) has been used to fabricate thin parallel-sided ferroelectric capacitors from single crystals of BaTiO3 and SrTiO3. A series of nano-sized capacitors ranging in thickness from &nvsim;660 nm to &nvsim;300 nm were made. Cross-sectional high resolution transmission electron microscopy (HRTEM) revealed that during capacitor fabrication, the FIB rendered around 20 nm of dielectric at the electrode-dielectric interface amorphous, associated with local gallium impregnation. Such a region would act electrically in series with the single crystal and would presumably have a considerable negative influence on the dielectric properties. However, thermal annealing prior to gold electrodes deposition was found to fully recover the single crystal capacitors and homogenise the gallium profile. The dielectric testing of the STO ultra-thin single crystal capacitors was performed yielding a room temperature dielectric constant of &nvsim;300, as is the case in bulk. Therefore, there was no evidence of a collapse in dielectric constant associated with thin film dimensions. [ABSTRACT FROM AUTHOR]

Pulsed Laser Deposition (PLD) was used to make Au/(Ba0.5Sr0.5)TiO3/(La0.5Sr0.5) CoO3/MgO thin film capacitor structures. Functional properties were studied with changing BST thickness from &nvsim;1265 nm to &nvsim;63 nm. The dielectric constant was found to decrease, and migration of Tm (the temperature at which the dielectric constant is maximum) to lower temperatures occurred as thickness was reduced. Curie-Weiss plots of the as-obtained dielectric data, indicated that the Curie temperature was also systemmatically progressively depressed. Further, fitting to expressions previously used to describe diffuse phase transitions suggested increased diffuseness in transformation behaviour as film thickness decreased. This paper discusses the care needed in interpreting the observations given above. We make particular distinction between the apparent Curie-temperature derived from Curie-Weiss plots of as-measured data, and the inherent Curie temperature determined after correction for the interfacial capacitance. We demonstrate that while the apparent Curie temperature decreases as thickness decreases, the inherent Curie temperature is thickness independent. Thickness-invariant phase transition behaviour is confirmed from analysis of polarisation loops, and from examination of the temperature dependence of the loss-tangent. We particularly note that correction of data for interfacial capacitance does not alter the position of Tm. We must therefore conclude that the position of Tm is not related simply to phase transformation behaviour in BST thin films. [ABSTRACT FROM AUTHOR]

An attempt has been made to unequivocally identify the influence that inhomogeneous strain fields, surrounding point defects, have on the functional properties of thin film ferroelectrics. Single crystal thin film lamellae of BaTiO3 have been integrated into capacitor structures, and the functional differences between those annealed in oxygen and those annealed in nitrogen have been mapped. Key features, such as the change in the paraelectric-ferroelectric phase transition from first to second order were noted and found to be consistent with mean field modeling predictions for the effects of inhomogeneous strain. Switching characteristics appeared to be unaffected, suggesting that point defects have a low efficacy in domain wall pinning. [ABSTRACT FROM AUTHOR]

Thin lamellae were cut from bulk single crystal BaTiO3 using a focused ion beam microscope. They were then removed and transferred onto single crystal MgO substrates, so that their functional properties could be measured independent of the original host bulk ferroelectric. The temperature dependence of the capacitance of these isolated single crystal films was found to be strongly bulklike, demonstrating a sharp Curie anomaly, as well as Curie–Weiss behavior. In addition, the sudden change in the remanent polarization as a function of temperature at TC was characteristic of a first order phase change. The work represents a dramatic improvement on that previously published by Saad et al. [J. Phys.: Condens. Matter 16, L451 (2004)], as critical shortcomings in the original specimen geometry, involving potential signal contributions from bulk BaTiO3, have now been obviated. That the functional properties of single crystal thin film lamellae are comparable to bulk, and not like those of conventionally deposited heterogeneous thin film systems, has therefore been confirmed. [ABSTRACT FROM AUTHOR]

The article offers information about the research on the application of the interface capacitance model (ICM) to thin film relaxors and ferroelectrics. Changes on the functional behavior of the ICM with thickness of the dielectric in the thin film were described. The thickness and temperature space of ICM were reexamined due to the applicability problem in prejudiced assumptions. Furthermore, the research assesses that thickness space of the ICM does not exist.

The article offers information on the rank minisymposium of electro-optic nanoarrays which was held in Cumbria, England on September 6, 2006. This meeting enabled scientists and researchers to exchange their views on the relationship of optics and electronics. It is stated that ferroelectrics covered a significant part of the minisymposia.

The authors offer their thoughts on the Rank Prize Fund. They said that this Fund was created in 1972 to help foster knowledge, learning, and education on the interplay of optics and electronics. They also forwarded that a minisymposia, which was attended by scientists and researchers, was conducted in Cumbria, England in September 2006. They also mentioned that ferroelectrics covered a significant part of the minisymposia.

A Maxwell-Wagner series capacitor model is proposed to explain anomalous dielectric properties of ferroelectric superlattices. The results of the model show that a superlattice consisting of normal ferroelectric layers separated by low-resistivity interfacial regions can account for most experimental results reported to date, namely: dielectric enhancement for certain stacking periodicities, giant permittivities, and temperature migration of dielectric maxima as a function of frequency. The predictions of the model are discussed and compared to our own experimental results from thin film superlattice capacitors made by pulsed-laser deposition. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

The manner in which 90° ferroelectric-ferroelastic domains respond to changes in temperature has been mapped in BaTi03 single crystals using atomic force microscopy. Domain periodicity remains unaltered until approximately 2 °C below the Curie temperature (Tc), whereupon domains coarsened dramatically. This behavior was successfully rationalized by considering the temperature dependence of the parameters associated with standard models of ferroelastic domain formation. However, while successful in describing the expected radical increase in equilibrium period with temperature, the model did not predict the unusual mechanism by which domain coarsening occurred; this was not continuous at a local level but instead involved discrete domain annihilation events. Subsequent insights from a combination of free energy analysis for the system and further experimental data from an analogous situation, in which domain period increases with increasing crystal thickness, suggested that domain annihilation is inevitable whenever a component of the relevant gradient that affects domain period is orientated parallel to the domain walls. Consistent with this thesis, we note that, for the observations presented herein, the thermal gradient possessed a significant component parallel to the domain walls. We suggest that domain annihilation is a general feature of domain structures in gradient fields. [ABSTRACT FROM AUTHOR]

In 1949, Forsbergh, Jr. reported spontaneous spatial ordering in the birefringence patterns seen in flux-grown BaTiO3 crystals under the transmission polarized light microscope [Phys. Rev. 76, 1187 (1949)]. Stunningly regular square-net arrays were often only found within a finite temperature window and could be induced on both heating and cooling, suggesting genuine thermodynamic stability. At the time, Forsbergh rationalized the patterns to have resulted from the impingement of ferroelastic domains, creating a complex tessellation of variously shaped domain packets. However, no direct evidence for the intricate microstructural arrangement proposed by Forsbergh has subsequently been found. Moreover, there are no robust thermodynamic arguments to explain the finite region of thermal stability, its occurrence just below the Curie temperature, and the apparent increase in entropy associated with the loss of the Forsbergh pattern on cooling. Despite decades of research on ferroelectrics, this ordering phenomenon and its thermodynamic origin have hence remained a mystery. In this paper, we reexamine the microstructure of flux-grown BaTiO3 crystals, which show Forsbergh birefringence patterns. Given an absence of any obvious arrays of domain polyhedra or even regular shapes of domain packets, we suggest an alternative origin for the Forsbergh pattern in which sheets of orthogonally oriented ferroelastic stripe domains simply overlay one another. We show explicitly that the Forsbergh birefringence pattern occurs if the periodicity of the stripe domains is above a critical value. Moreover, by considering well-established semiempirical models, we show that the significant domain coarsening needed to generate the Forsbergh birefringence is fully expected in a finite window below the Curie temperature. We hence present a much more straightforward rationalization of the Forsbergh pattern than that originally proposed in which exotic thermodynamic arguments are unnecessary. [ABSTRACT FROM AUTHOR]