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The usage of ferroelectric-gate field effect transistors (FeFET) in digital circuits has typically been its applications in memory. The use of FeFET to implement logic circuits is neither completely understood nor extensively studied. This paper presents simulations of electrical properties of a single FeFET and the resulting behavioral characterizations of FeFET-based basic logic circuits in a commercially available TCAD environment. The all-FeFET current mirror, CMOS inverter, 2-input-NAND and 2-input-NOR logic circuits show almost the same electrical characteristics as standard MOSFET ones, except for the negligible clockwise hysteresis under the condition of low voltage supply. Moreover, the all-FeFET current mode sensitive amplifier whose component units were all-FeFET common-source amplifier, current mirror and differential amplification, also works reasonably. [ABSTRACT FROM AUTHOR]

Perovskite ferroelectrics (FEs) have high endurance to radiation. Strontium titanate (STO) (SrTiO3) is a kind of perovskite FE with a large dielectric constant, which has attracted a good deal of attention due to its excellent dielectric, photoelectric and optical properties. The proton radiation damage in STO thin films is investigated by computer simulations in this work. The threshold displacement energy is an important input parameter for Monte Carlo simulation based on a binary collision approximation model, so we first use molecular dynamics to calculate the averaged threshold displacement energy of Sr, O and Ti atom. The calculated values are 67, 50 and 136 eV, which are obviously larger than default value (25 eV) in the Stopping and Range of Ions in Matter (SRIM) code. The results of the SRIM simulation demonstrate the dependency of vacancy number and position distribution on the proton's energy and the angle of incidence. [ABSTRACT FROM AUTHOR]