1. Fully inverted single-digit nanometer domains in ferroelectric films.
- Author
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Tayebi, Noureddine, Narui, Yoshie, Franklin, Nathan, Collier, C. Patrick, Giapis, Konstantinos P., Nishi, Yoshio, and Yuegang Zhang
- Subjects
FERROELECTRIC RAM ,FERROELECTRIC thin films ,THICK films ,SOLID state electronics ,FERROELECTRIC crystals ,ELECTRONIC equipment - Abstract
Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density (>1 Tbit/in.
2 ) probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to 40 Tbit/in.2 data storage densities. [ABSTRACT FROM AUTHOR]- Published
- 2010
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