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SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5d iridate thin films. [ABSTRACT FROM AUTHOR]

A series of In2O3 semiconducting thin films were grown on the ferroelectric 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3(111) (PMN–PT) single-crystal substrates in the form of ferroelectric field effect transistor (FeFET) devices by the pulsed laser deposition. The effects of substrate temperature and oxygen pressure on the structural and electrical properties of the In2O3 films are investigated. We find that the substrate temperature and oxygen pressure have great impact on the performance of the In2O3/PMN–PT FeFETs whose channel resistance could be tuned in a nonvolatile and reversible manner via the ferroelectric polarization switching in the PMN–PT layer. In particular, a significant resistance change of 144% and a carrier density change of 92% are achieved at room temperature for the In2O3 film deposited at 600 °C and 2 Pa oxygen pressure. Our results provide useful deposition parameters for growing epitaxial In2O3 thin films on large lattice-mismatched perovskite substrates and constructing In2O3 thin films based FeFETs for energy-efficient nonvolatile ferroelectric field effect device applications. [ABSTRACT FROM AUTHOR]

NiO–Ni composite films were heteroepitaxially grown on (111)-oriented ferroelectric 0.31Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.34PbTiO3 (PIN-PMN-PT) single-crystal substrates by pulsed laser deposition. The NiO films prepared in high vacuum are n-type conducting and possess room-temperature ferromagnetism, which originates from oxygen vacancies and the presence of the second Ni phase, respectively. Taking advantage of the electric-field-induced ferroelectric polarization charges, we realized in situ reversible and nonvolatile modulation of both the electrical resistance and magnetism of the film. A relative resistance change of ∼470% is obtained at room temperature, while an appreciable magnetization change of ∼15% was achieved at 50 K by switching the polarization states of PIN-PMN-PT. The coexistence of charge-density-tunable electronic and magnetic properties of NiO–Ni/PIN-PMN-PT heterostructures may provide a strategy to design charge-mediated multiferroic devices for nonvolatile memory and spintronic applications. [ABSTRACT FROM AUTHOR]

SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5d iridate thin films. [ABSTRACT FROM AUTHOR]

Integration of different functional materials into a device in which the physical properties can be tuned using an electric field in a reversible and nonvolatile manner is highly desired for the fabrication of compact and energy‐efficient multifunctional electronic devices. The integration of In2O3‐based semiconductor thin films with ferroelectric 0.71PbMg1/3Nb2/3O3‐0.29PbTiO3 (PMN‐0.29PT) single crystals in ferroelectric‐field‐effect‐transistor devices that allow for the tuning of carrier density, carrier type, Fermi level, and their related properties in a reversible and nonvolatile manner, is reported. Specifically, gating of In2–xCrxO3 (x = 0, 0.02, 0.05, 0.08, 0.11) films with a PMN‐0.29PT layer provides a means to reversibly tune and modulate the resistivity of the films up to an on‐and‐off ratio of 5.2 × 104% in a nonvolatile manner at room temperature. Such resistivity modulation is associated with reversible and nonvolatile transformation of the carrier type between n‐type and p‐type due to polarization switching. Additionally, reversible switching of resistivity is realized utilizing DEME‐TFSI ionic liquid as a top‐gate material. These results demonstrate that electrical‐voltage control of physical properties using PMN‐xPT as both substrate and gating material provides a highly effective approach to study the carrier‐density/type‐related physical properties of semiconductor films. [ABSTRACT FROM AUTHOR]