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Single-phase Ba1-xSrxTiO3 (BST) perovskite ceramics with 0.3 ≤ x ≤ 0.4 were prepared from powders synthesized via sol-gel route. The compositions have the ferroelectric-paraelectric phase transition close to room temperature. At 20 °C the BST ceramics are ferroelectric for 0.3 ≤ x ≤ 0.35 and paraelectric for x = 0.375 and x = 0.40. The study follows the relation between the structural changes produced when increasing the Sr content and the dielectric properties at low intensity electric fields. It is found that the grain size and tetragonality decreases as the Sr content increases. Analyses of complex permittivity and impedance spectroscopy reveal the temperature and frequency dependencies of the dielectric properties. The phase transitions seem to be of first order for all compositions, with a thermal hysteresis that decreases with increasing the Sr content, fact attributed to the corresponding increase of the grain boundaries weight allowing a more efficient stress relaxation in the structure during the change of the symmetry from cubic to tetragonal. The diffusiveness degree during the phase transition is increasing with Sr content, suggesting some relaxor-type contribution attributed to smaller grain size. The ac conductivity follows the universal Jonscher law, with an ac component having the power parameter s independent of Sr content, and a dc component that it is thermally activated with an activation energy of about 0.7–0.77 eV attributed to oxygen vacancies acting as donor-like defects. The fit of impedance spectra at different temperatures and frequencies is obtained by using an equivalent circuit accounting the grains, grain boundaries, electrode interfaces and the local contributions produced by reorientation of defect dipoles or defect clusters. All the component circuits have significant variations around phase transitions. These are discussed in relation to structural changes occurring during transition and considering the changes in the distribution of various charges when polarization vanishes.

Carbon layers are deposited on 100 nm thick atomically clean (001) lead zirconate titanate (PZT) in ultrahigh vacuum, ruling out the presence of any contaminants. X-ray photoelectron spectroscopy is used to assess the substrate surface or interface composition, substrate polarization and the thickness of carbon layers, which ranges from less than one monolayer (1 ML) of graphene to several monolayers. Atomically clean PZT(001) exhibit inwards polarization, and this polarization reverses the sign upon carbon deposition. Cationic vacancies are detected near the PZT surface, consistent with heavy p doping of these films near the surface. The carbon layers exhibited a consistent proportion of atoms forming in-plane sp2 bonds, as detected by near-edge absorption fine structure (NEXAFS) analysis and confirmed partially by scanning tunneling microscopy (STM). In situ poling with simultaneous in-plane transport measurements revealed the presence of resistance anti-hysteresis versus the polarization orientation for films with less than 1 ML carbon amount, evolving towards ‘normal’ hysteresis for thicker carbon films. The anti-hysteresis is explained in terms of a mixed screening mechanism, involving charge carriers from the sp2 carbon layers together with holes or ionized acceptors in PZT(001) near the interface. For thicker films, the compensation mechanism becomes extrinsic, involving mostly electrons and holes from carbon, yielding the expected hysteresis.

Polarization switching in ferroelectric films is exploited in many applications, such as non-volatile memories and negative capacitance field affect transistors. This can be inhomogeneous or homogeneous, depending on if ferroelectric domains are forming or not during the switching process. The relation between the polarization switching, the structural quality of the films and the negative capacitance was not studied in depth. Here, Pb(Zr0.2Ti0.8)O3 (PZT) layers were deposited by pulse laser deposition (PLD) and sol-gel (SG) on single crystal SrTiO3 (STO) and Si substrates, respectively. The structural quality was analyzed by X-ray diffraction and transmission electron microscopy, while the electric properties were investigated by performing hysteresis, dynamic dielectric measurements, and piezo-electric force microscopy analysis. It was found that the PZT layers grown by PLD on SRO/STO substrates are epitaxial while the layers deposited by SG on Pt/Si are polycrystalline. The polarization value decreases as the structure changes from epitaxial to polycrystalline, as well as the magnitude of the leakage current and of the differential negative capacitance, while the switching changes from homogeneous to inhomogeneous. The results are explained by the compensation rate of the depolarization field during the switching process, which is much faster in epitaxial films than in polycrystalline ones.

Ferroelectrics are intensively studied materials due to their unique properties with high potential for applications. Despite all efforts devoted to obtain the values of ferroelectric material constants, the problem of the magnitude of static dielectric constant remains unsolved. In this article it is shown that the value of the static dielectric constant at zero electric field and with negligible contribution from the ferroelectric polarization (also called static background dielectric constant, or just background dielectric constant) can be very low (between 10 and 15), possibly converging towards the value in the optical domain. It is also found that the natural state of an ideal, mono-domain, epitaxial ferroelectric is that of full depletion with constant capacitance at voltages outside the switching domain. The findings are based on experimental results obtained from a new custom method designed to measure the capacitance-voltage characteristic in static conditions, as well from Rayleigh analysis. These results have important implications in future analysis of conduction mechanisms in ferroelectrics and theoretical modeling of ferroelectric-based devices.

Manganese is deposited at high temperature on (001) oriented ferroelectric lead zirco-titanate prepared in two different ways: sputter-annealed or just simply annealed in ultrahigh vacuum. Room temperature ferromagnetism (FM) is obtained for Mn deposited on sputter-annealed substrates, while for the other sample preparation a paramagnetic behaviour is obtained. Also, for the first case a clear inwards component of the polarization P(−) is observed by X-ray photoelectron spectroscopy and piezoresponse force microscopy. Composition analysis evidenced formation of Pb vacancies in the case of FM – P(−) sample, consistent with hole formation near the surface, needed both to stabilize the inwards polarization state and to intermediate ferromagnetism between Mn2+ ions. The indirect exchange ferromagnetism mediated by holes is stronger, most probably because the interaction energy is proportional with the carrier effective mass. Also, whereas in the case of unsputtered substrate a stable surface Mn oxide is formed, defect formation by sputtering seems to favor Mn migration inside the sample. This also induces the formation of a thin film where ferromagnetism and the orientation of ferroelectric polarization might have the same origin, i. e. holes accumulated near the outer surface.

Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized. The PZT material was processed by a sol-gel method and then used as ferroelectric gate. The a-IGZO thin films, having the role of channel semiconductor, were deposited by radio-frequency magnetron sputtering, at a temperature of ~50°C. Characteristics of a typical field effect transistor with SiO2 gate insulator, grown on highly doped silicon, and of the PZT-based FeFET were compared. It was proven that the FeFETs had promising performances in terms of Ion/Ioff ratio (i.e., 106) and IDS retention behavior.

Ba0.75Sr0.25TiO3 (BST) and PbZr0.68Fe0.14Nb0.14Ti0.04O3 (PZFNT) ceramic pellets were obtained by ceramic technology and their structural, ferroelectric and pyroelectric properties were investigated. The relative density of BST and PZFNT is about 93% and 90%, respectively, with an average grain size of 102 ?m and 6.45 ?m. Both materials have similar room temperature dielectric constants (~2000), but PZFNT shows higher remnant polarization (~15?C/cm2) and better pyroelectric properties (~1.69?10?4 C/m2K), which recommend it for pyroelectric detectors, infrared radiation- and laser pulse energy-meters.

The frequency and temperature dependence of dielectric properties of CH3NH3PbI3 (MAPI) crystals have been studied and analyzed in connection with temperature-dependent structural studies. The obtained results bring arguments for the existence of ferroelectricity and aim to complete the current knowledge on the thermally activated conduction mechanisms, in dark equilibrium and in the presence of a small external a.c. electric field. The study correlates the frequency-dispersive dielectric spectra with the conduction mechanisms and their relaxation processes, as well as with the different transport regimes indicated by the Nyquist plots. The different energy barriers revealed by the impedance spectroscopy highlight the dominant transport mechanisms in different frequency and temperature ranges, being associated with the bulk of the grains, their boundaries, and/or the electrodes’ interfaces.

Structural and electrical properties of epitaxial Pb(Zr0.2Ti0.8)O3 films grown by pulsed laser deposition from targets with different purities are investigated in this study. One target was produced in-house by using high purity precursor oxides (at least 99.99%), and the other target was a commercial product (99.9% purity). It was found that the out-of-plane lattice constant is about 0.15% larger and the a domains amount is lower for the film grown from the commercial target. The polarization value is slightly lower, the dielectric constant is larger, and the height of the potential barrier at the electrode interfaces is larger for the film deposited from the pure target. The differences are attributed to the accidental impurities, with a larger amount in the commercial target as revealed by composition analysis using inductive coupling plasma-mass spectrometry. The heterovalent impurities can act as donors or acceptors, modifying the electronic characteristics. Thus, mastering impurities is a prerequisite for obtaining reliable and reproducible properties and advancing towards all ferroelectric devices.

International audience; Properties of epitaxial PbZr0.2Ti0.8O3 (PZT) films deposited on Si substrates were investigated for integration in the present CMOS technology. Polarization is downward oriented, in association with the presence of an internal electric field, and has a lower value compared to the PZT films deposited on single crystal perovskite SrTiO3 (STO) substrates (40 mu C/cm(2) versus 80 mu C/cm(2)), while the dielectric constant is larger (180 versus 120). Large value for the pyroelectric coefficient was also found, 1.22 x 10(-3)C/m(2)K, as for PZT grown on single crystal STO. The macroscopic ferroelectric and pyroelectric properties appear to be affected by the structural quality and stoichiometry of the PZT film. The changes in the electric properties are an effect of the strain gradients induced by the large difference between the thermal expansion coefficients of PZT and Si substrate, leading in turn to Pb oxidation and antisite defect formation compared to PZT films deposited on STO substrates.

The negative-capacitance effect in devices based on combined ferroelectric-dielectric gate oxides is thought to be a potential solution to break free from the so-called Boltzmann tyranny. To lower the power consumption in field-effect transistors, the subthreshold swing factor $S$ should be reduced below the thermodynamic limit of $60\phantom{\rule{0.2em}{0ex}}\mathrm{mV}$ per decade. Yet, despite numerous studies dedicated to this effect in the past decade, its origin in ferroelectric capacitors or ferroelectric-based superlattices remains unclear, being considered either a transitory product of polarization switching or an intrinsic phenomenon related to the presence of ferroelectric polarization. In this study it is shown, starting from simple electrostatic considerations, that negative capacitance is present during polarization switching and is accompanied by a significant increase of the current flowing through the ferroelectric capacitor. Coupled with piezo-force microscopy results, it is shown that the polarization orientation suddenly changes at the coercive voltage, accompanied by a complete reconfiguration of the potential barriers at the Schottky-like contacts present at the electrode-ferroelectric interfaces. A method to estimate the polarization-switching time, as the time associated with the presence of the negative-capacitance effect, is proposed. Values in the range from 100 to 1000 ns are obtained for epitaxial $\mathrm{Pb}{\mathrm{Zr}}_{0.2}{\mathrm{Ti}}_{0.8}{\mathrm{O}}_{3}$ films. These findings suggest that negative capacitance may be an intrinsic effect in ferroelectrics but that it is a transitory effect, present only when ferroelectric polarization passes through zero (switching).

Germanium Metal-Ferroelectric-Semiconductor (MFS) capacitors based on ferroelectric Hf1−xZrxO2 (HZO) with clean, oxide free Ge/HZO interfaces emerge as an interesting layer structure for the fabrication of ferroelectric field effect transistor (FeFET) non-volatile memory devices. It is shown that, at low temperature (

In this work, we report on the variability of the Schottky effect in solution processed Ba1-xSrxTiO3 films (BST, x = 0, 0.5) grown on 0.5% Nb doped SrTiO3 substrates with top Pt electrodes (NSTO/BST/Pt). The films display leakage currents accompanied by varying degrees of hystereses in the current-voltage measurements. The magnitude of the leakage and hystereses depend on the Sr content. We focus on the current-voltage (I-V) behavior of our samples in the light of thermodynamic theory of ferroelectrics coupled with equations of semiconductors. Our calculations allowed us to unambigously determine the electronic character of the defects and related band bending effects in our samples. The extent of asymmetry and the hystereses in the I-V curves for x = 0 and 0.5 are shown to be controlled by the polarization in qualitative agreement with our calculations. Amplitude of the ferroelectric polarization, which is a function of composition here, has a strong impact on leakage currents in forward bias while this effect is much weaker under negative bias. The latter occurs as polarization pointing away from the NSTO semiconducting substrate causes depletion of carriers at the NSTO side of the NSTO/BST interface, increasing resistance to current flow through the stack. Such an occurence also increases the energy gap between the Fermi level and the conduction bands of the films, thereby reducing the bulk conduction through the film as well. The dependence of leakage currents on polarization direction points out to the possibility of a non-destructive read-out route in ferroelectric films much thicker than tunnel junctions.

By platinum deposition on a 150 nm thick film of lead zirco-titanate oriented PZT(001), grown on strontium titanate (001) single crystals with a strontium ruthenate buffer layer, which did not show initial preferential out-of-plane orientation of its ferroelectric polarization, a band bending near the interface towards lower energies is observed using photoelectron spectroscopy, by following all core levels from the substrate (Pb 4f, Zr 3d, Ti 2p, O 1s). This is unexpected given the fact that platinum has a larger work function than PZT and a rectifying contact for electrons is expected to be built at the interface. This observation may have two explanations: (i) platinum forms an alloy with elements from PZT yielding a metal with considerable lower work function; (ii) platinum provides electrons to the substrate which are able to compensate the depolarization field generated by the outwards polarization state. Several arguments are brought in favor of the second hypothesis, especially the attenuation of core levels from the substrate which is well described by exponential functions with reasonable values of the photoelectron inelastic mean free path, suggesting the formation of a sharp interface. High resolution transmission electron microscopy confirmed the sharpness of the interface.

Un-doped ZnO (UDZO) and Li-doped ZnO (LZO) polycrystalline thin films were grown on platinized silicon by pulsed laser deposition (PLD). The electrical properties were investigated on as-grown and annealed UDZO and LZO films with capacitor configuration, using top and bottom platinum electrodes. In the case of the as-grown films it was found that the introduction of Li increases the resistivity of ZnO and induces butterfly shape in the C-V characteristic, suggesting ferroelectric-like behavior in LZO films. The properties of LZO samples does not significantly changes after thermal annealing while the properties of UDZO samples show significant changes upon annealing, manifested in a butterfly shape of the C-V characteristic and resistive-like switching. However, the butterfly shape disappears if long delay time is used in the C-V measurement, the characteristic remaining non-linear. Pyroelectric signal could be measured only on annealed films. Comparing the UDZO results with those obtained in the case of Li:ZnO, it was found that the pyroelectric properties are considerably enhanced by Li doping, leading to pyroelectric signal with about one order of magnitude larger at low modulation frequencies than for un-doped samples. Although the results of this study hint towards a ferroelectric-like behavior of Li doped ZnO, the presence of real ferroelectricity in this material remains controversial.

The frequency and temperature dependence of dielectric properties of CH3NH3PbI3 (MAPI) crystals have been studied and analyzed in connection with temperature-dependent structural studies. The obtained results bring arguments for the existence of ferroelectricity and aim to complete the current knowledge on the thermally activated conduction mechanisms, in dark equilibrium and in the presence of a small external a.c. electric field. The study correlates the frequency-dispersive dielectric spectra with the conduction mechanisms and their relaxation processes, as well as with the different transport regimes indicated by the Nyquist plots. The different energy barriers revealed by the impedance spectroscopy highlight the dominant transport mechanisms in different frequency and temperature ranges, being associated with the bulk of the grains, their boundaries, and/or the electrodes’ interfaces.

The integration of ferroelectrics in perovskite solar cells is proposed as possible way to enhance charge collection efficiency. First results on solar cell manufactured with PbTiO3 (PTO) instead of TiO2 have shown negligible values for the power conversion efficiency (PCE). This is explained by the high serial resistance of sol-gel deposited PTO on F:SnO2 electrodes (FTO). Although PTO layer has remnant polarization of 22 μC/cm2, the high potential barrier (0.25 ± 0.05 eV) at the FTO/PTO interface and low carrier mobility (10−8 cm2 V−1 s−1) compared to TiO2 leads to high serial resistance. Better results were obtained with thinner PTO layers grown by pulsed laser deposition, with PCE values up to 0.6%. Further enhancement was obtained by replacing PTO with BaTiO3 (BTO), with PCE value reaching about 0.8% after poling the cell with +3 V. The most important finding was that the magnitude of the short circuit current increases with the amplitude of the poling voltage while the value of the open-circuit voltage remains about the same, around 0.9 V. This is explained through more efficient collection of the charges generated under illumination in the absorber layer due to the polarization that is present in the ferroelectric film. Keywords: Ferroelectric, Perovskite, Solar cell, Polarization

Measurements of the magnetocapacitance effect in epitaxial La0.7Sr0.3MnO3/Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 heterostructures have been performed using a quasi-static method. Through capacitance-voltage measurements carried out under variable magnetic field it has been found that the magneto-capacitance depends on the orientation of the ferroelectric polarization. The value of magneto-capacitance can be as high as 1% in the voltage range near the ferroelectric coercive field. This has been attributed to a variation of the apparent built-in voltage of the PZT-LSMO Schottky barriers on applied magnetic field.

The substantial increase in the power conversion efficiency of hybrid perovskite solar cells, to date reaching more than 20% in the laboratory, has strongly motivated research on this class of organic-inorganic materials and related devices, particularly based on CH3NH3PbI3-xXx/TiO2 heterostructures (X = Cl,Br). Taking under consideration that a ferroelectric substrate may act as an efficient electron transporter, positively influencing charge collection across the interface and allowing the tuning of the halide perovskite (HP) - ferroelectric junction, we performed extensive density functional theory calculations on CH3NH3PbI3-xClx layers deposited on tetragonal PbTiO3 (PTO) (001) surfaces, to study their structural and electronic properties. The main findings of this study are as follows. (i) A ferroelectric polarization pointing from the PTO/HP interface to the PTO is favorable for the photogenerated electrons transfer across the interface and their transport to the collecting electrode. (ii) The PTO internal electric field leads to a position dependent energy levels diagram. (iii) The HP gap may be tuned by chlorine concentration at the interface, as well as the by the surface terminations of PbTiO3 and hybrid perovskite layers. (iv) The presence of the PTO ferroelectric surface is likely to have just a slight orientational effect on the (CH3NH3)+ dipoles. (Graph Presented).

The storage and processing of information on the same device, known as $m\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}m\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}m\phantom{\rule{0}{0ex}}p\phantom{\rule{0}{0ex}}u\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}g$, is a next-generation approach to computing. To this end, the authors present a ferroelectric-insulator-ferroelectric memcapacitor, based on different polarization configurations in the two ferroelectric layers. This setup allows digital and analog memory applications augmented by binary logic operations based on capacitive switching. Multiple stable capacitive states offer many possibilities: simple memory cells with nondestructive reading and improved fatigue; neuromorphic or chaotic circuits; low power consumption; simplified architectures; and reduced manufacturing cost.

Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x = 0.5–0.7) on technologically important (100) Germanium substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately orthorhombic phase. The electrical properties, evaluated using metal-ferroelectric-semiconductor (MFS) capacitors, show symmetric and robust ferroelectric hysteresis with weak or no wake-up effects. The MFS capacitors with x = 0.58 show very large remanent polarization up to 34.4 μC/cm2 or 30.6 μC/cm2 after correction for leakage and parasitics, combined with good endurance reaching 105 cycles at a cycling field of 2.3 MV/cm. The results show good prospects for the fabrication of Ge ferroelectric field effect transistors (FeFETs) for use in 1 T FeFET embedded nonvolatile memory cells with improved endurance.

5 mol% Ce3+-doped barium titanate nanoshell tubes were prepared via sol–gel method using as template a polycarbonate membrane with channels of 200 nm diameter. FE-SEM analyses showed that continuous and uniform green tubes with length up to 15 μm, an average outer diameter of 188.6 nm and wall thickness of 15.1 nm, were obtained. After calcination at 700 °C for 1 h, these amorphous 1D nanostructures were converted into polycrystalline tubes with an average outer diameter of 157.4 nm and a grain size of 43.4 nm, as high resolution transmission electron microscopy (HR-TEM) and selected area electron diffraction (SAED) indicated. Thermo-Raman investigations pointed out diffuse phase transitions, inducing the preservation of a stable polar state at higher temperatures (up to 200 °C). Piezoresponse force microscopy (PFM) investigations on 5 mol% Ce3+-doped BaTiO3 nanoshell tubes revealed ferroelectric and piezoelectric behaviour which recommends these tubes for microelectronic devices.

The emerging field of electronics based on ferro-functional materials relies on driving effectively and predictably a ferroelectric system between different polarization states through bias applied to metallic contacts. This requires detailed understanding of the growth mechanisms and electronic properties of the interface, including ferroelectric and material – dependent band alignment and Schottky barrier heights. Whether the major contribution at the interface band alignment comes from the work function difference or from the ferroelectric state is still under debate. Here, using X-ray photoemsion and ab-initio calculations, we derive the complex microscopic picture of metal/ferroelectric interface formation, including growth mechanism, valence alteration, ferroelectric-dependent electrostatic potential and thickness – dependent compensation mechanisms of ferroelectricity, starting from the ultrathin growth of Cu up to 100 A on BaTiO3. One establishes the evolution of the band bending and of the build-in potential from the initial probed thickness of the ferroelectric in the range of 3 λ ( λ – the inelastic mean free path) while gradually approaching the contact region with the metal at higher thickness of the top layer. We find that the well-defined orientation of the ferroelectric polarization lead to a band bending at the interface, which add at the bending expected from the work function difference of the two joining materials.

The orientation of polarization in ferroelectric thin films is important for applications of these materials in nonvolatile memory and field-effect transistors with ferroelectric gates, and in catalysis and photocatalysis. One means of control is to choose a well defined substrate, but the influence of a substrate's electronic properties on polarization orientation is not well understood. In this investigation of model systems, the experimental findings are integrated with electrostatic models to determine the magnitudes and orientations of the interfacial electric fields that are useful for setting the polarization of the thin ferroelectric epilayer.

The concept of graded ferroelectrics became of significant interest for researchers working in the field of ferroelectric materials and related applications during the 1990s, when a number of published papers reported a series of intriguing phenomena observed in this type of structure. Among these are the shift of the hysteresis loop along the polarization axis, the presence of a giant effective pyroelectric coefficient, and the possibility of using the graded structures as ferroelectrics similar to semiconductor p–n junctions. Some pioneering experimental work was performed on simple structures composed of two layers with different values of polarization, called also ferroelectric bimorph. During the years, the interest for graded structures remained significant both from the point of view of the basic research as well as considering the potential applications in electronics, sensing, and energy. The concept of graded ferroelectric structures includes all structures in which a polarization gradient is present. This gradient can be obtained in several ways, such as (1) producing a concentration gradient along the direction normal to the electrodes; (2) producing a temperature gradient between the opposite electrodes of the capacitor; and (3) producing a strain gradient along the direction normal to the electrodes.

The current–voltage ( C-V ) characteristic of epitaxial ferroelectric films is simulated assuming the presence of Schottky-type contacts at the two electrode interfaces. The model assumes that the overall capacitance of the metal-ferroelectric-metal ( MFM ) structure is composed of two parts: (i) one associated with the Schottky contacts, in which the ferroelectric polarization is saturated, the dielectric constant is independent on the voltage and only the linear response to the applied electric field is taken into account; (ii) one related to the ferroelectric volume, where the dielectric constant is voltage dependent through the hysteresis response of the ferroelectric polarization. The most important result of the model is that it can simulate the experimentally observed thickness dependence of the dielectric constant without considering a so-called “dead layer” at the electrode interface. The model renders C-V characteristics in good qualitative agreement with the experimental ones in the case of an MFM structure based on epitaxial PZT films. The quantitative fit suggests that the behaviour of the ferroelectric polarization during the C-V measurement may be very different from its behaviour during the hysteresis measurement. This is explained by the fact that the two measurements have very different principles. It is also found that the dielectric constant of the ferroelectric volume has a different voltage dependence compared to the one derived from the hysteresis loop or from the experimental C-V characteristic. This is also related to the different measurement principles and to the fact that the measured capacitance of the MFM structure includes, besides the ferroelectric volume, the voltage dependent capacitance of the Schottky contacts.

Here we report a ferroelectric capacitor structure obtained by alternating ferroelectric and insulator thin-film layers which allows an increase of up to 2n polarization states, with n the number of ferroelectric layers. Four and up to eight distinct, stable and independently addressed polarization states are experimentally demonstrated in this work. The experimental findings are supported by a theoretical model based on the Landau–Ginzburg–Devonshire theory. The key parameter is the change in the strain conditions of ferroelectric layers induced by the insulating separator. Notably, the 2n increase in the storage capacity can be achieved without major changes in the present technology used for FeRAM devices. The test structures demonstrate very good memory characteristics such as retention and fatigue, opening the way towards the design of high density ferroelectric memories.

Ferroelectric nonvolatile memory is of keen interest for information and communication technologies requiring vast storage, but its development has been slowed by size effects that prevent the boosting of storage capacity. This study uses a multilayered structure with three polarization states to increase the storage capacity of a memory cell by at least 50%, without requiring major changes to existing technology. This approach could have a significant impact on the drive toward multibit memory devices based on simple ferroelectric capacitors.

The positions of the low energy electron diffraction (LEED) spots from ferroelectric single crystal films depend on its polarization state, due to electric fields generated outside of the sample. One may derive the surface potential energy, yielding the depth where the mobile charge carriers compensating the depolarization field are located ($\ensuremath{\delta}$). On ferroelectric $\mathrm{Pb}(\mathrm{Zr},\mathrm{Ti}){\mathrm{O}}_{3}$(001) samples, surface potential energies are between 6.7 and 10.6 eV, and $\ensuremath{\delta}$ values are unusually low, in the range of $1.8\ifmmode\pm\else\textpm\fi{}0.4\phantom{\rule{0.16em}{0ex}}\AA{}$. When $\ensuremath{\delta}$ is introduced in the values of the band bending inside the ferroelectric, a considerably lower value of the dielectric constant and/or of the polarization near the surface than their bulk values is obtained, evidencing either that the intrinsic `dielectric constant' of the material has this lower value or the existence of a `dead layer' at the free surface of clean ferroelectric films. The inwards polarization of these films is explained in the framework of the present considerations by the formation of an electron sheet on the surface. Possible explanations are suggested for discrepancies between the values found for surface potential energies from LEED experiments and those derived from the transition between mirror electron microscopy and low energy electron microscopy.

The stability of thin films of lead zirco-titanate (PZT) under intense soft X-ray beams is investigated by time-resolved photoelectron spectromicroscopy with a lateral resolution below 1 micrometer. Surface dissociation is observed when samples are irradiated with intense (5 × 1023 photons per s per m2) soft X-rays, with promotion of reduced lead on the surface. On areas exhibiting outwards polarization (P(+)), the reduced lead is formed at the expense of P(+)-PZT. On areas presenting co-existing P(+) states with areas without out-of-plane polarization (P(0)), the reduced lead is formed at the expense of the P(0)-PZT component, while the P(+)-PZT remains constant. The main dissociation mechanism was found to be triggered by 'hot' electrons in the conduction band, with energies exceeding the surface dissociation energies. Dissociation occurs basically when the electron affinity is larger than the dissociation energy of PbO (for P(+) areas) or PbO- (for P(0) areas). Such mechanisms may be adapted for dissociation of other molecules on surfaces of ferroelectric thin films or for quantifying the stability of ferroelectric surfaces interacting with other radiation, with applications in the fields of photocatalysis or photovoltaic devices.

The band bending at Cu/PZT(001) interfaces is investigated by X-ray photoelectron spectroscopy (XPS) for a PZT(001) layer which exhibits initial outwards ferroelectric polarization. Two competitive processes are identified: (a) formation of the Schottky barrier between the ferroelectric and unconnected Cu islands, and (b) coalescence of the Cu islands, realisation of an electrical contact to the ground of the system, inducing the apparent loss of the component of the ferroelectric polarization perpendicular to the sample surface, at least as it manifests in band bending. Three mechanisms are proposed to explain this loss of band bending when a full metal layer connected to ground is formed on the surface: (i) over-compensation of depolarization field in the sub-surface region, (ii) formation of domains with in-plane orientation of the polarization vector and (iii) loss of polarization in the near-surface layers of the ferroelectric due to electrons provided by the metal. These result in a non-monotonous variation of binding energies with the amount of Cu deposited. High resolution transmission electron microscopy and piezoresponse force microscopy confirmed these hypotheses. The XPS data allowed also to derive the surface PZT composition, its evolution with the deposition of copper and the formation of surface compounds.

The fundamental phenomena at ferroelectric interfaces have been the subject of thorough theoretical and computational studies due to their usefulness in a large variety of emergent electronic devices, solar cells and catalysts. Ferroelectricity determines interface band-bending and shifts in electron energies, which can be beneficial or detrimental to device performance. However, the underlying mechanisms are still the subject of debate and investigation, as a deeper understanding of the electrochemistry is required to develop bona fide design principles for functional ferroelectric surfaces and interfaces. Here, using first principles calculations within the GGA + U formalism, we investigate the problem of band alignment in non-defective, asymmetric SrRuO3/PbTiO3/SrRuO3 capacitors with ultra-thin ferroelectric layers. The effects of the dielectric size on the polar distortion stability and interface-specific properties are analyzed. It is shown that the critical size of the dielectric for polarization switching is ≈ 2 nm (5 PbTiO3 u.c.). Below this limit there is no bulk-like region in the dielectric, the space charge accumulated at interfaces leads to the presence of gap states in the whole PbTiO3 layer and ferroelectricity vanishes. We draw the band alignment diagrams as given by the band line-up and band structure terms, as well as by taking Ti 3s semi-core states as reference. In the ferroelectric structures, both approaches predict a strong effect of band-bending on the type of contact, Schottky or Ohmic, at the asymmetric interfaces. The effect of interface states on the interface dipole amplitude and band alignment is discussed.

A carbon-based layer was deposited by spraying on top of a ferroelectric layer grown by sol-gel on Si (001) substrate and its properties as electrode and absorber for pyroelectric detection were tested. It was found that the electric properties of the ferroelectric capacitor with top carbon-based sprayed electrode (CBSE) are comparable with those of the capacitors with standard top SrRuO3 (SRO)/Au electrode. Pyroelectric measurements show that the pyroelectric signal recorded on ferroelectric capacitors with top CBSE electrode is 2.5 times greater than for top SRO/Au electrode for low frequency range. The value of the pyroelectric coefficient was estimated to 9.73·10-4 C/m2K for CBSE electrodes and 3.36·10-4 C/m2K for SRO/Au respectively. The fabrication process of CBSE is of low cost, easy to implement and with high throughput making it attractive for manufacturing various devices like pyroelectric detector, thermal imaging, solar cells, etc.

This paper analyses in detail the core levels evolution of Pb(Zr,Ti)O 3 , i.e. Pb 4f, Zr 3d, Ti 2p, O 1s in various conditions: absolutely freshly prepared sample, sample stored under air, and the effects of in vacuum annealing. The aim of the study is to quantify separately the chemical reactivity at the surface and the band bending effects due to the ferroelectric polarization. It is found that freshly prepared samples present mostly inwards (↓) polarization. This phenomenon is mostly revealed by the Ti 2p and O 1s spectra, manifested as a distinct component with 1.8 eV lower binding energy in the O 1s binding energy and by 1.1 eV in the Ti 2p binding energy. Sample aging under air suppresses the inwards polarization, and most signal comes from surfaces not presenting ferroelectric permanent polarization perpendicular to the sample surface. This process conducts also to the formation of Pb(CO 3 ) 2 on the surface. Annealing to temperatures up to 400 °C stabilizes a surface composed by a main part of surface without polarization perpendicular to the surface, and with some areas presenting outwards (↑) polarization. These areas have, most probably, different terminations, the polarized area being (Ti,Zr)O 2 terminated.

This work presents a systematic investigation by X-ray photoelectron spectroscopy of the mechanisms of interface formation and band bending for Au/Pb(Zr,Ti)O 3 (PZT) layers grown on SrTiO 3 (001) with a SrRuO 3 buffer layer, as function on the initial state of the PZT surface. After isolating the chemical effects, such as the formation of metal Pb at some surfaces, the evolution of the core levels with Au deposition allows one to simultaneously investigate the Schottky barrier formation and the built-in potential effects (charging induced by the static ferroelectric polarization). Areas of the sample with outwards P (+) and no polarization perpendicular to the surface P (0) are identified for all samples. Only the freshly prepared sample exhibited inward polarization areas P (−) . The built-in potential is on the order of 0.9 eV, while the Schottky band bending ranges from 0.2 to 0.6 eV towards lower absolute energies, therefore indicating that the work function of PZT exceeds that of Au deposited. We report also a chemically differentiate value of the built-in potential, manifested by a preferential distribution of the charge accumulated at the surface on Ti and O atoms. The O 1s and Ti 2p core levels manifest quite strong variations with the Au thickness for freshly prepared samples, resulting in shifts on the order of 2 eV towards lower binding energies. Au deposited on areas with an outward polarization is positively charged by the same potential as atoms from the PZT film (0.8–0.9 eV), whereas Au deposited on areas with an inward polarization forms a continuous grounded layer, which progressively pumps the accumulated charge and removes the polarization of these areas.

The growth of gold layers on Pb(Zr,Ti)O 3 (PZT) deposited on SrTiO 3 is investigated by X-ray photoelectron spectroscopy in the Au thickness range 2–100 A. Two phases are identified, with compositions close to nominal PZT. The ‘standard’ phase is represented by all binding energies (Pb 4f, Ti 2p, Zr 3d, O 1s) sensibly equal to the nominal values for PZT, whereas the ‘charged’ phase exhibits all core levels are shifted by ∼1 eV toward higher binding energies. By taking into account also scanning probe microscopy images together with recent photoemission results, the ‘charged’ phase belongs to P (+) regions of PZT, whereas the ‘normal’ phase corresponds to regions with no net ferroelectric polarization perpendicular to the surface. Au deposition proceeds in a band bending of Φ PZT − Φ Au ∼ 0.4–0.5 eV for both phases, identified as similar shifts toward higher binding energies of all Pb, Ti, Zr, O core levels with Au deposition. The Au 4f core level exhibits also an unusually low binding energy component 1 eV below the ‘nominal’ Au 4f binding energy position (metal Au). This implies the existence of negatively charged gold, or electron transfer from PZT to Au, although the ‘normal’ PZT phase have a higher work function, as it is derived from the band bending. Most probably this charge transfer occurs toward Au nanoparticles, which have even higher ionization energies. High resolution transmission electron microscopy evidenced the formation of such isolated nanoparticles.

Atomically clean lead zirco-titanate PbZr0.2Ti0.8O3 (001) layers exhibit a polarization oriented inwards P(−), visible by a band bending of all core levels towards lower binding energies, whereas as introduced layers exhibit P(+) polarization under air or in ultrahigh vacuum. The magnitude of the inwards polarization decreases when the temperature is increased at 700 K. CO adsorption on P(−) polarized surfaces saturates at about one quarter of a monolayer of carbon, and occurs in both molecular (oxidized) and dissociated (reduced) states of carbon, with a large majority of reduced state. The sticking of CO on the surface in ultrahigh vacuum is found to be directly related to the P(−) polarization state of the surface. A simple electrostatic mechanism is proposed to explain these dissociation processes and the sticking of carbon on P(−) polarized areas. Carbon desorbs also when the surface is irradiated with soft X-rays. Carbon desorption when the polarization is lost proceeds most probably in form of CO2. Upon carbon desorption cycles, the ferroelectric surface is depleted in oxygen and at some point reverses its polarization, owing to electrons provided by oxygen vacancies which are able to screen the depolarization field produced by positive fixed charges at the surface.

The leakage current for a thin film metal-ferroelectric-metal device was modelled using an electron tunnelling approach. The potential energy through the device was obtained from an electrostatic argument and a balance equation was imposed for the incoming and outgoing currents. Using the obtained leakage current, experimental data was fitted in order to obtain qualitative values for the model parameters. Good agreement between the obtained dielectric constant and numerical calculations performed in the literature.

A model for current voltage characteristics of a thin film metal-ferroelectric-metal structure is constructed by combining the electrostatics of a polarized ferroelectric film with the balanced flow of charge through its interfaces. Using a set of fitting parameters, good agreement with several sets of experimental data is obtained for different system temperatures. The influence of model parameters on the current-voltage characteristic is discussed. Best fit values of some of these parameters correlate well with ab initio calculations in the literature, supporting the idea of low dielectric permittivity of the interface transition layers in the ferroelectric.

Carbon layers grown on lead zirco-titanate (PZT) weakly interact with the substrate and exhibit a nearly two dimensional character, up to a carbon surface density approaching that of graphene. The first feature is evidenced by X-ray photoelectron spectroscopy, and the second by angle resolved near-edge-absorption spectroscopy (NEXAFS). The binding energies and lineshape parameters of C 1s are similar to that of graphene. The dichroism of C K-edge NEXAFS shows the prevalence of in-plane sp2 bonds for layers whose effective coverage is below the graphene surface density. The polarization state of the substrate, oriented outwards, is preserved upon carbon deposition. The surface Pb content is strongly affected by the carbon ad-layers.

The results of the electric and magnetic measurements performed on PbZr0.2Ti0.8O3–BiFeO3 symmetric structures, deposited on Pt/Si wafers, were compared for different number of layers in order to analyse the effect of interfaces over the macroscopic properties. It was found that the shape and magnitude of the capacitance–voltage characteristic, as well as the shape and parameters of the ferroelectric and magnetic hysteresis, depend on the number of interfaces in the intended multilayer structure. A temperature induced gradual transition from a magnetically disordered spin glass like phase of low temperature to an uncompensated antiferromagnetic phase at room temperature takes place in the BiFeO3 films, under low applied magnetic fields. A partial ferromagnetic like order can be obtained at low temperatures by increasing the field. The observed changes in the electric and magnetic behaviour of the systems were related to an increased degree of disorder for electric dipoles and magnetic moments, due to the increased number of layers and crystallization treatments.

PbZr 0.2 Ti 0.8 O 3 -BiFeO 3 -PbZr 0.2 Ti 0.8 O 3 (PZT-BFO-PZT) structure was prepared by sol-gel method on Pt/Si wafers. Three metals were tested as top electrod: Au, Cu, and Pt. A double hysteresis loop was observed in all cases, suggesting an antiferroelectric-like behavior. The values for remnant polarization and coercive field are about 3 μC/cm 2 and 115 kV/cm, respectively. The saturation polarization is about 22 μC/cm 2 . Capacitance and leakage current show significant dependence on the top metal electrode. The results were explained considering the presence of a Schottky-type contact at the PZT-metal interface.

The sol–gel deposition method has been successfully applied to obtain Pb(Zr0.2Ti0.8)O3 thin films on platinized silicon wafers. Addition of different amounts (7–15 wt.%) of organic macromolecular polyvinylpyrrolidone in the precursor solution prior to spin coating proves to be an excellent method for obtaining porous films. The crystal structure of as deposited films was analyzed by X-ray diffraction. The porous films show perovskite phase after annealing at 650 °C. The surface morphology has been studied by Atomic Force Microscopy and Scanning Electron Microscopy. The surface profile indicates a roughness of the film of 5 nm and no microcracks on the surface. The ferroelectric behavior was proved for each film, by hysteresis loops and by the “butterfly” shape of the capacitance–voltage characteristics. The remnant polarization and the coercive field decrease while the amount of added PVP increases.

The compensation of the depolarization field in ferroelectric layers requires the presence of a suitable amount of charges able to follow any variation of the ferroelectric polarization. These can be free carriers or charged defects located in the ferroelectric material or free carriers coming from the electrodes. Here we show that a self-doping phenomenon occurs in epitaxial, tetragonal ferroelectric films of Pb(Zr0.2Ti0.8)O3, consisting in generation of point defects (vacancies) acting as donors/acceptors. These are introducing free carriers that partly compensate the depolarization field occurring in the film. It is found that the concentration of the free carriers introduced by self-doping increases with decreasing the thickness of the ferroelectric layer, reaching values of the order of 1026 m−3 for 10 nm thick films. One the other hand, microscopic investigations show that, for thicknesses higher than 50 nm, the 2O/(Ti+Zr+Pb) atomic ratio increases with the thickness of the layers. These results suggest that the ratio between the oxygen and cation vacancies varies with the thickness of the layer in such a way that the net free carrier density is sufficient to efficiently compensate the depolarization field and to preserve the outward direction of the polarization.

International audience; Ferroelectric/electric properties of PbZr0.52Ti0.48O3 (PZT) thin films grown by pulsed laser deposition (PLD) on two different substrates, Si (001) and SrTiO3 (STO) (001), were comparatively analyzed. The structural characterization has revealed the epitaxial relationship between the grown layers and the two types of substrates, with larger density of structural defects for the films deposited on Si (001) with buffer STO layer. The ferroelectric/electric properties are also different, with lower remnant polarization (about half of the value obtained on STO substrate), higher dielectric constant (about two times larger), and lower leakage current (about two orders of magnitude lower) for the PZT films deposited on Si (001) compared to those deposited on (001) STO substrates. Nevertheless, the results show that the use of a STO buffer layer on Si can be a solution to obtain good quality PZT capacitor structures without using expensive single-crystal oxide substrates. In this way, applications based on PZT capacitors (e.g. non-volatile memories, pyroelectric detectors, light switches, etc.) would be more easily integrated directly on Si wafers.

The existence of threading dislocations in ferroelectric heterostructures has been frequently reported. However, their origin and impact on the ferroelectric properties are not sufficiently understood. PbZr0.2Ti0.8O3/SrRuO3 heterostructures were epitaxially grown by pulsed-laser deposition (PLD) onto vicinal SrTiO3(001) substrates. The threading dislocations exhibited by the PbZr0.2Ti0.8O3 films were investigated by cross-sectional and plan-view (high-resolution) transmission electron microscopy. Many threading dislocations were dissociated into dipoles spanning a, most probably lead-rich, stacking fault. It is likely that these dislocations are able to pin 180° ferroelectric domains, as suggested by a comparison between piezo-force microscope and transmission electron micrographs obtained on identical samples. Local backswitching of the polarization was observed in the vicinity of such threading dislocations.