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Spin–orbit torques (SOTs) provide an efficient way to electrically manipulate the magnetic order in spintronic devices. Compared with conventional ferromagnetic materials, ferrimagnetic materials have the advantages of antiferromagnetically coupled sublattices and induced ultrafast spin dynamics. In this paper, we study the current-induced magnetization switching in the ferrimagnetic Ta/GdFeCo/MgO system. Robust SOT-induced magnetization switching can be achieved at the magnetic compensation temperature point of around 70 K, where the magnetization is nearly zero and the coercivity can reach almost 3 T. The temperature dependence of the SOT efficiency is quantified by the second harmonic method, and the enhanced SOT efficiency near the magnetic compensation temperature is attributed to the negative exchange coupling between the two sublattices of CoFe and Gd. This work demonstrates the SOT switching of the nearly compensated ferrimagnet, with great potential for future magnetic interaction-free and ultrafast ferrimagnetic applications. [ABSTRACT FROM AUTHOR]

This paper presents numerical and experimental data for dipole-dipole coupled Ni nanodots on a piezoelectric [Pb(Mg1/3Nb2/3)O3]0.68[PbTiO3]0.32 substrate. Simulation results show that the dipole coupling produces artificial ferromagnetic (parallel magnetization alignment in the nanodot arrays) behavior that can be modified to artificial antiferromagnetic behavior with an applied voltage. Experimental results show the trends in Mr and Hc predicted by the model, but discrepancies arise due to geometric defects present in the fabricated samples. Geometric defects are introduced into the Ni nanodot models, thus dramatically improving the correlation between experiments and analysis. This work shows, through numerical simulations, that artificial multiferroic nanostructures can be designed to produce switching from parallel (artificial ferromagnetic) to antiparallel (artificial antiferromagnetic) magnetization ordering by leveraging dipole coupling with voltage induced changes in magnetic anisotropy. [ABSTRACT FROM AUTHOR]

We report strain-induced coercive field changes in patterned 300 × 100 × 35 nm3 Ni nanostructures deposited on Si/SiO2 substrate using the magnetoelastic effect. The coercive field values change as a function of the applied anisotropy strain (∼1000 ppm) between 390 and 500 Oe, demonstrating that it is possible to gradually change the coercive field elastically. While the measured changes in coercive field cannot be accurately predicted with simple analytical predictions, fairly good agreement is obtained by using a micromagnetic simulation taking into account the influence of nonuniform strain distribution in the Ni nanostructures. The micromagnetic simulation includes a position dependant strain-induced magnetic anisotropy term that is computed from a finite element mechanical analysis. Therefore, this study experimentally corroborates the requirement to incorporate mechanical analysis into micromagnetic simulation for accurately predicting magnetoelastic effects in patterned ferromagnetic nanostructures. [ABSTRACT FROM AUTHOR]

We study the effect of the oxide layer on the current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Hf|CoFeB|MgO (MgO-capped) or Hf|CoFeB|TaOx (TaOx-capped) structures. The effective fields corresponding to both the field-like and damping-like current-induced SOTs are characterized using electric transport measurements. Both torques are found to be significantly stronger in MgO-capped structures than those in TaOx-capped structures. The difference in fieldlike and damping-like SOTs in the different structures may be attributed to the different Rashbalike Hamiltonian, arising from the difference in the electric potential profiles across the oxide| ferromagnet interfaces in the two cases, as well as possible structural and oxidation differences in the underlying CoFeB and Hf layers. Our results show that the oxide layer in heavymetal |ferromagnet|oxide trilayer structures has a very significant effect on the generated SOTs for manipulation of ferromagnetic layers. These findings could potentially be used to engineer SOT devices with enhanced current-induced switching efficiency. [ABSTRACT FROM AUTHOR]

Magnetization switching by current-induced spin-orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin-orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co20Fe60B20/TaOx structures by spin-orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin-orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin-orbit torque is out-of-plane, facilitating the switching of perpendicular magnets. [ABSTRACT FROM AUTHOR]