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We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity band determining the extended ('metallic' transport) or localized (hopping by thermal excitation) nature of the states at and near the Fermi level. Magnetic order and resistivity are inter-related due to the influence of the spin polarization of the impurity band and the effect of the Zeeman splitting on the mobility edge. We obtain, for a given range of Mn concentration and carrier density, a 'metallic' behavior in which the transport by extended carriers dominates at low temperature, and is dominated by the thermally excited localized carriers near and above the transition temperature. This gives rise to a conspicuous hump of the resistivity which has been experimentally observed and brings light onto the relationship between transport and magnetic properties of this material. [ABSTRACT FROM AUTHOR]

Bulk Zn1-xCoxO samples were synthesized via standard solid-state reaction route with different Co molar concentrations up to 21%. A detailed microstructural analysis was carried out to investigate alternative sources of ferromagnetism, such as secondary phases and nanocrystals embedded in the bulk material. Conjugating different techniques we confirmed the Zn replacement by Co ions in the wurtzite ZnO structure, which retains, however, a high crystalline quality. No segregated secondary phases neither Co-rich nanocrystals were detected. Superconducting quantum interference device magnetometry demonstrates a paramagnetic Curie–Weiss behavior with antiferromagnetic interactions. We discuss the observed room temperature paramagnetism of our samples considering the current models for the magnetic properties of diluted magnetic semiconductors. [ABSTRACT FROM AUTHOR]

We investigate the spin-polarized transport of holes in GaMnAs/GaAs heterostructures with Mn concentration 5% in which a ferromagnetic order is known to exist. Disorder enters the problem both in the random distribution of Mn centers and impurities, and also in the orientation of the magnetic moments at the Mn sites. We take into account the existence of an impurity band determining the extended or localized nature of the states at and near the Fermi level. Magnetic order and resistivity are inter-related due to the influence of the spin polarization of the impurity band and the effect of the Zeeman splitting on the mobility edge. We obtain two channels of transport, one provided by the extended states above the mobility edge, when this lies below the Fermi level, the other coming out of the thermal excitation of the localized states through a hopping mechanism. We discuss the competition between these two channels in determining, once having obtained the dependence of the resistance on temperature, the metallic or non-metallic nature of the sample. [ABSTRACT FROM AUTHOR]

The interplay between disorder and spin polarization in a GaMnAs thin layer results into spin-polarized impurity hole bands. A figure of merit is defined to label the nature of the sample as metallic or nonmetallic. It is shown that samples with the highest figures of merit have a ratio between the extended hole density and the Mn concentration near 0.2, in agreement with the ratio of 0.1–0.25 known to occur among samples produced with the highest Curie temperatures. Both the nonmetal-to-metal and the metal-to-nonmetal transitions experimentally observed in the ferromagnetic regime are obtained as the Mn concentration increases. [ABSTRACT FROM AUTHOR]