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We measure the anomalous Hall effect (AHE) in several patterns of the itinerant ferromagnet SrRuO3 before and after the patterns are irradiated with electrons. The irradiation increases the resistivity of the patterns due to the introduction of point defects and we find that the AHE coefficient Rs scales with the total resistivity before and after irradiation which indicates that the AHE is determined by the total resistivity. We discuss possible origins of slight deviations from scaling that are observed at low temperature, particularly below 70 K. [ABSTRACT FROM AUTHOR]

SrRuO3 is an itinerant ferromagnet with a Curie temperature of 150 K and a uniaxial magnetocrystalline anisotropy. Using high-quality epitaxial thin films, we measure at 2 K the anisotropic magnetoresistance and the planar Hall effect as a function of the in-plane current direction and the magnetization orientation. We identify three types of contributions related to (a) the orientation of the magnetization relative to the crystal axes, (b) the direction of the current relative to the crystal axes, and (c) the orientation of the magnetization relative to the current. [ABSTRACT FROM AUTHOR]

We measure the anomalous Hall effect (AHE) resistivity ρxy in thin films of the itinerant ferromagnet SrRuO3. At low temperatures, the AHE coefficient Rs varies with Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed, and at higher temperatures, Rs reaches a peak and then changes sign just below Tc. We find that for all films studied, Rs scales with resistivity in the entire ferromagnetic phase. We attribute the observed behavior to the contribution of the extrinsic side-jumps mechanism and the intrinsic Karplus-Luttinger (Berry phase) mechanism, including the effect of finite scattering rates. [ABSTRACT FROM AUTHOR]