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Magnetostatic spin wave scattering and interference across a CoTaZr ferromagnetic spin wave waveguide cross junction were investigated experimentally and by micromagnetic simulations. It is observed that the phase of the scattered waves is dependent on the wavelength, geometry of the junction, and scattering direction. It is found that destructive and constructive interference of the spin waves generates switching characteristics modulated by the input phase of the spin waves. Micromagnetic simulations are used to analyze experimental data and simulate the spin wave scattering and interference. [ABSTRACT FROM AUTHOR]

Backward volume magnetostatic spin wave interference in ferromagnetic cross is explored. Spin waves are excited at the two input arms of the cross, interference signal amplitude, and phase are detected in the other two, output arms of the cross. Spin wave scattering defines the out of phase interference in the output arms of the cross: the constructive (destructive) interference is observed at different input wave phase shifts in different output arms of the cross. Numeric simulations are in a good agreement with experiment. Based on the observed interference, we propose the cross junction spin wave logic device that operates as an OR or NOR logic gates. Spin wave phase represents the logic information. Destructive and constructive interference in the cross center determines the phase of the device output. [ABSTRACT FROM AUTHOR]

Electric-field manipulation of ferromagnetism has the potential for developing a new generation of electric devices to resolve the power consumption and variability issues in today’s microelectronics industry. Among various dilute magnetic semiconductors (DMSs), group IV elements such as Si and Ge are the ideal material candidates because of their excellent compatibility with the conventional complementary metal–oxide–semiconductor (MOS) technology. Here we report, for the first time, the successful synthesis of self-assembled dilute magnetic Mn0.05Ge0.95 quantum dots with ferromagnetic order above room temperature, and the demonstration of electric-field control of ferromagnetism in MOS ferromagnetic capacitors up to 100 K. We found that by applying electric fields to a MOS gate structure, the ferromagnetism of the channel layer can be effectively modulated through the change of hole concentration inside the quantum dots. Our results are fundamentally important in the understanding and to the realization of high-efficiency Ge-based spin field-effect transistors. [ABSTRACT FROM AUTHOR]