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A quasi-hydrodynamic model of a submicrometer field-effect transistor was used to study the effect of the drift-velocity overshoot on the characteristics of drain-current saturation. It is shown that, in submicrometer transistor structures based on many-valley semiconductors, the current saturation is controlled by levelling off of the electron-drift velocity in the channel, with this levelling off being caused by the effective intervalley scattering. It is also shown that the highest electron-drift velocity in the channel is inversely proportional to the transistor gate length. [ABSTRACT FROM AUTHOR]

Studies the structural features of the avalanche multiplication in field-effect heterotransistors. Conditions for high-field heating charge carriers to enhance the electric strength of a transistor; Formula of thermoionic emission; Current of the transistor-surface channel.

Examines the effect of the transconductance increase in gallium-arsenic field-effect transistors. Profile of the donor -admixture distribution in a field-effect transistor with the sectioned channel; Electron-temperature distribution in the sectioned structure of a field-effect transistor.