1. Degradation Mechanism of Ge N+-P Shallow Junction With Thin GeSn Surface Layer.
- Author
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Tsui, Bing-Yue, Liao, Hsiu-Hsien, and Chen, Yi-Ju
- Subjects
- *
FIELD-effect transistors , *ION implantation , *MASS spectrometry , *CHARGE carrier mobility , *KIRKENDALL effect , *PHOSPHORUS , *TRANSISTORS - Abstract
In this article, the degradation mechanism of the Ge N+-P junctions with a thin GeSn surface layer is investigated, aiming for source/drain (S/D) application in emerging field-effect transistors. GeSn is a promising channel material with high carrier mobility, which can offer a better performance of the field-effect transistors. By performing thermal annealing at different temperatures, the reverse-biased leakage current increases apparently when annealing temperature exceeds 550 °C. X-ray diffraction (XRD) analysis indicates most Sn atoms escape from lattice sites while secondary-ion mass spectroscopy (SIMS) analysis indicates enhanced Sn diffusion in Ge bulk after ion implantation. Therefore, a degradation model considering Sn-defects interaction is proposed to explain the degradation of junction leakage current and possible solution is proposed. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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