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This paper postulates a tunable active inductor-based voltage controlled oscillator for IEEE 802.11 a/b/g/n/ac applications in 90 nm CMOS process. In the designed VCO, the modified topology of the active inductor which uses regulated cascode is implemented along with tuning competency. The layout-based simulation has been performed considering parasitic resistances and capacitances. The designed VCO yields an oscillation frequency ranging from 1.93 GHz to 5.97 GHz having tuning scope of 102%, where the tuning voltages is varied from 0 V to 0.8 V. The power consumption varies from 0.97 mW to 3.32 mW, and the VCO provides a differential output power of 3.29 dBm to −4.76 dBm. The phase noise varies from −78.52 dBc/Hz to −70.45 dBc/Hz, and the figure of merit (FOM) has a value of −143.63 dBc/Hz @ 5.09 GHz frequency. The designed VCO has been passed through process corner analysis, Monte Carlo analysis, stability analysis and temperature swept analysis to evaluate its compatibility. Furthermore, the elimination of MOS varactor has reduced overall silicon area consumption (39.73 × 25.3 \mum). Finally, the designed VCO's performance parameters have been compared with referred designs where it is illustrated that the designed VCO outperforms the others in most cases along with a good scope for implementing both 2.4 GHz and 5 GHz frequency that is, IEEE 802.11a/b/g/n/ac applications. [ABSTRACT FROM AUTHOR]

This paper presents a wideband varactorless voltage controlled oscillator (VCO) based on tunable active inductor in 90 nm CMOS process which yields a tuning range of 1.22 GHz to 3.7 GHz having a tuning scope of 100.5%. The designed VCO can be used for wideband wireless applications. The proposed VCO consumes a very low power (1.05~2.5) mW with the change of tuning voltages (0.3~0.9) V and provides a differential output power of (1.17~-5.13) dBm. The VCO exhibits phase noise of -80.50 dBc/Hz @ 2.74 GHz and the Figure of merit (FOM) is -147.73 dBc/Hz @ 2.74 GHz at 1MHz offset frequency. Achievement of high tuning range by altering the inductance of inductor which paves the way for eliminating the MOS varactor that recedes the overall silicon area consumption, is the noteworthy outcome of the proposed VCO. Furthermore, considering the dc power consumption, Figure of merit (FOM) and consistency of performance parameters over tuning range, the proposed VCO outstrips the other referred VCOs. [ABSTRACT FROM AUTHOR]

This paper presents a tunable active inductor based ultra-low power, low area voltage-controlled oscillator (VCO) in 90 nm CMOS process. In the designed VCO, the modified topology of the active inductor is employed along with tuning capability. The layoutbased simulation has been performed deeming parasitic resistances and capacitances. The designed VCO yields an oscillation frequency ranging from 1.38 GHz to 3.16 GHz with a tuning range of 78.41%, where the tuning voltage is driven from 0.4 V to −0.2 V. The power dissipation varies from 0.062 mW to 0.177 mW, and the VCO provides a differential output power of 8.34 dBm to 3.94 dBm. The phase noise varies from −71 dBc/Hz to −65.4 dBc/Hz, and the Figure of Merit (FoM) has a value of −143.09 dBc/Hz @ 2.79 GHz frequency. The process corner analysis, temperature swept analysis, and Monte Carlo analysis of the proposed VCO had been carried out for the evaluation of its compatibility for diversified environments. Furthermore, the exclusion of the MOS varactor has condensed total silicon area consumption (10.3 μm × 8.5 μm). Finally, the designed VCO's performance parameters have been compared with mentioned designs where it is demonstrated that the designed VCO outdoes the others in most cases along with outstanding outcomes of low power and low silicon area consumption. [ABSTRACT FROM AUTHOR]