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1. Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs.

2. Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization.

3. A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs.

4. Predictive Simulation and Benchmarking of Si and Ge pMOS FinFETs for Future CMOS Technology.

5. Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs.

6. Comparative Simulation Analysis of Process-Induced Variability in Nanoscale SOI and Bulk Trigate FinFETs.

7. Process Variability—Technological Challenge and Design Issue for Nanoscale Devices.

8. Statistical distribution of RTS amplitudes in 20nm SOI FinFETs.

9. Statistical variability study of a 10nm gate length SOI FinFET device.

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