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Elastic scattering of photons from 12C has been investigated using quasi-monoenergetic tagged photons with energies in the range 65 - 115 MeV at laboratory angles of 60 deg, 120 deg, and 150 deg at the Tagged-Photon Facility at the MAX IV Laboratory in Lund, Sweden. A phenomenological model was employed to provide an estimate of the sensitivity of the 12C(g,g)12C cross section to the bound-nucleon polarizabilities., Comment: 9 pages, 7 figures, to be submitted to Physical Review C

We probe the real space electronic response to a local magnetic impurity in isovalent and heterovalent doped BaFe2As2 (122) using Nuclear Magnetic Resonance (NMR). The local moments carried by Mn impurities doped into Ba(Fe1-xCox)2As2(Co-122) and BaFe(As1-xPx)2(P-122) at optimal doping induce a spin polarization in the vicinity of the impurity. The amplitude, shape and extension of this polarisation is given by the real part of the susceptibility chi'(r) of FeAs layers, and is consequently related to the nature and strength of the electronic correlations present in the system. We study this polarisation using 75As NMR in Co-122 and both 75As and 31P NMR in P-122. The NMR spectra of Mn-doped materials is made of two essential features. First is a satellite line associated with nuclei located as nearest neighbor of Mn impurities. The analysis of the temperature dependence of the shift of this satellite line shows that Mn local moments behave as isolated Curie moments. The second feature is a temperature dependent broadening of the central line. We show that the broadening of the central line follows the susceptibility of Mn local moments, as expected from typical RKKY-like interactions. This demonstrates that the susceptibility chi'(r) of FeAs layers does not make significant contribution to the temperature dependent broadening of the central line. chi'(r) is consequently only weakly temperature dependent in optimally doped Co-122 and P-122. This behaviour is in contrast with that of strongly correlated materials such as underdoped cuprate high-Tc superconductors where the central line broadens faster than the impurity susceptibility grows, because of the development of strong magnetic correlations when T is lowered. Moreover, the FeAs layer susceptibility is found quantitatively similar in both heterovalent doped and isolvalent doped BaFe2As2.

A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration (considered as 5% in our calculation) makes it possible to assume the density of magnetic moments as a continuous distribution, when treating the magnetic interaction between holes and the localized moment on the Mn(++) sites. Our calculation shows the distribution of heavy holes and light holes in the structure. A strong spin-polarization is observed, and the charge is concentrated mostly on the GaMnAs layers, due to heavy and light holes with their total angular momentum aligned anti-parallel to the average magnetization. The charge and spin distributions are analyzed in terms of their dependence on the number of multilayers, the widths of the GaMnAs and GaAs layers, and the width of lateral GaAs layers at the borders of the structure., 12 pages,7 figures

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory., 4 pages

The magnetic order resulting from a confinement-adapted Ruderman-Kittel-Kasuya-Yosida indirect exchange between magnetic moments in the metallic phase of a AlAs/Ga(1-x)Mn(x)As quantum well is studied by Monte Carlo simulation. This coupling mechanism involves magnetic moments and carriers (holes), both coming from the same Mn(2+) ions. It leads to a paramagnetic, a ferromagnetic, or a canted spin phase, depending on the carrier concentration, and on the magnetic layer width. It is shown that high transition temperatures may be obtained., Comment: 7 figures