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The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts have been devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, we have systematically investigated the spin state in epitaxial LaCoO3 thin films to clarify the mechanism of strain induced ferromagnetism using element-specific x-ray absorption spectroscopy and dichroism. Combining with the configuration interaction cluster calculations, we unambiguously demonstrate that Co3+ in LaCoO3 films under compressive strain (on LaAlO3 substrate) are practically a low spin state, whereas Co3+ in LaCoO3 films under tensile strain (on SrTiO3 substrate) have mixed high spin and low spin states with a ratio close to 1:3. From the identification of this spin state ratio, we infer that the dark strips observed by high-resolution scanning transmission electron microscopy indicate the position of Co3+ high spin state, i.e., an observation of a spin state disproportionation in tensile-strained LaCoO3 films. This consequently explains the nature of ferromagnetism in LaCoO3 films.

The Cu2ZnSn(S, Se)4 (CZTSSe) emerging inorganic solar cell is highly promising for accelerating the large-scale and low-cost applications of thin-film photovoltaics. It possesses distinct advantages such as abundant and non-toxic constituent elements, high material stability, and excellent compatibility with industrial processes. However, CZTSSe solar cells still face challenges related to complex defects and charge losses. To overcome these limitations and improve the efficiency of CZTSSe solar cells, it is crucial to experimentally identify and mitigate deep defects. In this study, we reveal that the dominant deep defect in CZTSSe materials exhibits donor characteristics. We propose that incomplete cation exchange during the multi-step crystallization reactions of CZTSSe is the kinetics mechanism responsible for the defect formation. To address this issue, we introduce an elemental synergistic alloying approach aimed at weakening the metal-chalcogen bond strength and the stability of intermediate phases. This alloying strategy has facilitated the kinetics of cation exchange, leading to a significant reduction in charge losses within the CZTSSe absorber. As a result, we have achieved a cell efficiency of over 14.5%. These results represent a significant advancement for emerging inorganic solar cells and additionally bring more opportunities for the precise identification and regulation of defects in a wider range of multinary inorganic compounds.

We investigate ultrafast harmonic generation (HG) in Si:B, driven by intense pump pulses with fields reaching ~100 kV/cm and a carrier frequency of 300 GHz, at 4 K and 300 K, both experimentally and theoretically. We report several novel findings concerning the nonlinear charge carrier dynamics in intense sub-THz fields. (i) Harmonics of order up to n=9 are observed at room temperature, while at low temperature we can resolve harmonics reaching even n=13. The susceptibility per charge carrier at moderate field strength is as high as for charge carriers in graphene, considered to be one of the materials with the strongest sub-THz nonlinear response. (ii) For T=300 K, where the charge carriers bound to acceptors are fully thermally ionized into the valence subbands, the susceptibility values decrease with increasing field strength. Simulations incorporating multi-valence-band Monte-Carlo and finite-difference-time-domain (FDTD) propagation show that here, the HG process becomes increasingly dominated by energy-dependent scattering rates over the contribution from band non-parabolicity, due to the onset of optical-phonon emission, which ultimately leads to the saturation at high fields. (iii) At T=4 K, where the majority of charges are bound to acceptors, we observe a drastic rise of the HG yields for internal pump fields of 30 kV/cm, as one reaches the threshold for tunnel ionization. We disentangle the HG contributions in this case into contributions from the initial 'generational'- and subsequent band-nonlinearities, and show that scattering seriously degrades any coherent recollision during the subsequent oscillation of the holes.

Dark modes represent a class of forbidden transitions or transitions with weak dipole moments between energy states. Due to their low transition probability, it is difficult to realize their interaction with light, let alone achieve the strong interaction of the modes with the photons in a cavity. However, by mutual coupling with a bright mode, the strong interaction of dark modes with photons is possible. This type of mediated interaction is widely investigated in the metamaterials community and is known under the term electromagnetically induced transparency (EIT). Here, we report strong coupling between a plasmonic dark mode of an EIT-like metamaterial with the photons of a 1D photonic crystal cavity in the terahertz frequency range. The coupling between the dark mode and the cavity photons is mediated by a plasmonic bright mode, which is proven by the observation of a frequency splitting which depends on the strength of the inductive interaction between the plasmon bright and dark modes of the EIT-like metamaterial. In addition, since the plasmonic dark mode strongly couples with the cavity dark mode, we observes four polariton modes. The frequency splitting by interaction of the four modes (plasmonic bright and dark mode and the two eigenmodes of the photonic cavity) can be reproduced in the framework of a model of four coupled harmonic oscillators.

Semiconductor-superconductor hybrid nanowires are a leading material platform for the realization of Majorana zero modes. The semiconductors in previous studies are dominantly InAs or InSb. In this work, we show the induced superconductivity in a PbTe nanowire epitaxially coupled to a superconductor Pb. The Josephson junction device based on this hybrid reveals a gate-tunable supercurrent in the open regime and a hard superconducting gap in the tunneling regime. By demonstrating the superconducting proximity effect, our result can enable Majorana searches and other applications like gate-tunable qubits in a new semiconductor system., Raw data and processing codes within this paper are available at: https://doi.org/10.5281/zenodo.7398019

Operational stability of perovskite solar cells is remarkably influenced by the device temperature, therefore, decreasing the interior temperature of the device is one of the most effective approaches to prolong the service life. Herein, we introduce the spontaneous radiative cooling effect into the perovskite solar cell and amplify this effect via functional structure design of a full-carbon electrode (F-CE). Firstly, by the aid of interfacial engineering, >19% and >23% power conversion efficiencies of F-CE based inorganic CsPbI3 and hybrid perovskite solar cells have been achieved, respectively, both of which are the highest reported efficiencies based on carbon electrode and are comparative to the results for metal electrodes. Highly efficient thermal radiation of this F-CE can reduce the temperature of the operating cell by about 10°C. Compared with the conventional metal electrode-based control cells, the operational stability of the above two types of cells have been significantly improved due to this cooling effect. Especially, the CsPbI3 PSCs exhibited no efficiency degradation after 2000 hours continuous operational tracking.One-Sentence Summary: Thermal radiative cooling effect of full-carbon electrode enhances operational stability of the perovskite solar cells.

The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in-situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties., 4 figures

Here, we have grown single crystals of LaTe2-xSbx (x=0 and 0.4) with continuously adjustable CDW. High-pressure x-ray diffraction show LaTe2 does not undergo phase transition and keep robust below 40 GPa. In-situ high-pressure electrical measurements show LaTe2-xSbx undergo semiconductor-metal-superconductivity transition at 4.6 and 2.5 GPa, respectively. With the doping of Sb, the highest Tc increases from 4.6 to 6.5 K. Theoretical calculations reveal that the CDW has been completely suppressed and the calculated Tc is about 2.97 K at 4.5 GPa, consistent with the measured value. Then, the pressure-induced superconductivity in LaTe2-xSbx can be explained in the framework of the BCS theory., Comment: 11 pages, 5 figures

In this work, we present a novel artificial photosynthetic paradigm with square meter (m2) level scalable production by integrating photovoltaic electrolytic water splitting device and solar heating CO2 hydrogenation device, successfully achieving the synergy of 1 sun driven 19.4% solar to chemical energy efficiency (STC) for CO production (2.7 times higher than state of the art of large-sized artificial photosynthetic systems) with a low cost (equivalent to 1/7 of reported artificial photosynthetic systems). Furthermore, the outdoor artificial photosynthetic demonstration with 1.268 m2 of scale exhibits the CO generation amount of 258.4 L per day, the STC of ~15.5% for CO production in winter, which could recover the cost within 833 suuny days of operation by selling CO., Comment: 22pages,3 figures

Since the discovery of high temperature superconductivity in cuprates, Josephson junction based phase-sensitive experiments are believed and used to provide the most convincing evidence for determining the pairing symmetry. Regardless of different junction materials and geometries used, quantum tunneling involved in these experiments is essentially a nanoscale process, and thus, actual experimental results are extremely sensitive to atomic details of the junction structures. The situation has led to controversial results as to the nature of the pairing symmetry of cuprates: while in-plane junction experiments generally support $d$-wave pairing symmetry, those based on out-of-plane ($c$-axis) Josephson junctions between two rotated cuprate blocks favor $s$-wave pairing. In this work, we revisit the $c$-axis experiment by fabricating Josephson junctions with atomic-level control in their interface structure. We fabricate over 90 junctions of ultrathin Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO) flakes by state-of-the-art exfoliation technique and obtain atomically flat junction interfaces in the whole junction regions as characterized by high resolution transmission electron microscopy (TEM). Notably, the resultant uniform junctions at various twist angles all exhibit a single tunneling branch behavior, suggesting that only the first half a unit cell on both sides of the twisted flakes is involved in Josephson tunneling process. With such well-defined geometry/structure and the characteristic single tunneling branch, we repeatedly observe Josephson tunneling at a nominal twist angle of 45 degrees, which is against the expectation from a purely $d$-wave pairing scenario. Our results strongly favor the scenario of a persistent $s$-wave order parameter in the junction., 11 pages, 10 figures

The interplay among various collective electronic states such as superconductivity (SC) and charge density wave (CDW) is of tremendous significance in low-dimensional transition metal dichalcogenides. Thus far, a consensus on the relationship between SC and CDW has not been established in IrTe2, where either competing or collaboration pictures have been suggested in the bulk or thick flakes. Here, we use the state-of-art Au-assisted exfoliation method to overcome the obstacle of interlayer Te-Te bonding, cleaving the IrTe2 down to monolayer for the first time. A striking feature revealed by angle-resolved polarized Raman spectroscopy (ARPRS) and electrical transport measurements is the concurrence of phase separation in one single piece of nano-flake, i.e. the superconducting (P-3m1) and CDW (P-3) area. In the pure SC area, the dimensional fluctuations completely suppress the CDW ordering and induce SC at 3.5 K. Meanwhile, the pure CDW area with much enhanced TCDW at 605 K (compared to TCDW = 280 K in bulk) is always accompanied by a unique wrinkle pattern. Detailed analyses suggest the local strain-induced bond breaking of the Te-Te dimer facilitates the emergence of the CDW order. Our works provide compelling evidence of competition between SC and CDW, highlighting the importance of microstructure in determining the ground states of IrTe2., Comment: 10 pages, 4 figures

Anisotropies in electronic transportations conventionally originate from the nature of low symmetries in crystal structures, and were not anticipated for perovskite oxides, the crystal asymmetricity of which is far below, e.g. van der Waals or topological crystal. Beyond conventional expectations, herein we demonstrate pronounced anisotropies in the inter-band coulomb repulsion dominated electronic transportation behaviors under low-dimensional confinement for the perovskite family of rare-earth nickelates (ReNiO3). From one aspect, imparting bi-axial interfacial strains upon various lattice planes results in extrinsic anisotropies in the abrupt orbital transitions of ReNiO3, and their metal to insulator transition behaviors that elevates the transition temperature beyond the existing merit. From the other aspect, the in-plane orbital entropy associated to the in-plane symmetry of the NiO6 octahedron within ReNiO3 causes intrinsic anisotropies for the gradually orbital transition with temperature to further improve their thermistor transportation properties. The present work unveils the overlooked role of the electronic orbital directionality within low dimensional correlated perovskites that can trigger anisotropic transportation behaviors, in spite of their relatively symmetric crystal structures. Establishing anisotropic transportations integrating the electron correlation and quantum confinement effects will bring in a new freedom for achieving further improvement in transportation properties of multi-functional perovskite oxides.

We prepared single unit cell FeSe films on GaO$_{2-��}$ terminated perovskite NdGaO$_{3}$(110) substrates and performed ex situ transport and scanning transmission electron microscopy measurements on the FeTe protected films. Our experimental measurements showed that the single unit cell FeSe films interfaced with GaO$_{2-��}$ layer are electron doped via interface charge transfer. Most importantly, this type of heterostructure can host interface enhanced superconductivity with an onset temperature of about 28 K, which is much higher than the value of 8 K in bulk FeSe. Our work indicates that FeSe/GaO$_{2-��}$can be a comparative platform with the FeSe/TiO$_{2-��}$ family for understanding the mechanism of interface enhanced high temperature superconductivity.