1. Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes
- Author
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Ng, Hong Kuan, Xiang, Du, Suwardi, Ady, Hu, Guangwei, Yang, Ke, Zhao, Yunshan, Liu, Tao, Cao, Zhonghan, Liu, Huajun, Li, Shisheng, Cao, Jing, Zhu, Qiang, Dong, Zhaogang, Tan, Chee Kiang Ivan, Chi, Dongzhi, Qiu, Cheng-Wei, Hippalgaonkar, Kedar, Eda, Goki, Yang, Ming, and Wu, Jing
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences - Abstract
In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS$_2$, and leads to the wrong conclusion.
- Published
- 2023