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Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through the nanowire. Here, we demonstrate a more versatile approach on investigating the charge configuration of these quantum dots. We employ a high-impedance, magnetic-field resilient superconducting resonator based on NbTiN and couple it to a double quantum dot in a Ge/Si nanowire. This allows us to dispersively detect charging effects, even in the regime where the nanowire is fully pinched off and no direct current is present. Furthermore, by increasing the electro-chemical potential far beyond the nanowire pinch-off, we observe indications for depleting the last hole in the quantum dot by using the second quantum dot as a charge sensor. This work opens the door for dispersive readout and future spin-photon coupling in this system.

The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field, and Bayesian inference. This approach has enabled us to infer the disorder potential of a nanoscale electronic device from electron transport data. This inference is validated by verifying the algorithm's predictions about the gate voltage values required for a laterally-defined quantum dot device in AlGaAs/GaAs to produce current features corresponding to a double quantum dot regime.

A key challenge in quantum computation is the implementation of fast and local qubit control while simultaneously maintaining coherence. Qubits based on hole spins offer, through their strong spin-orbit interaction, a way to implement fast quantum gates. Strikingly, for hole spins in one-dimensional germanium and silicon devices, the spin-orbit interaction has been predicted to be exceptionally strong yet highly tunable with gate voltages. Such electrical control would make it possible to switch on demand between qubit idling and manipulation modes. Here, we demonstrate ultrafast and universal quantum control of a hole spin qubit in a germanium/silicon core/shell nanowire, with Rabi frequencies of several hundreds of megahertz, corresponding to spin-flipping times as short as ~1 ns - a new record for a single-spin qubit. Next, we show a large degree of electrical control over the Rabi frequency, Zeeman energy, and coherence time - thus implementing a switch toggling from a rapid qubit manipulation mode to a more coherent idling mode. We identify an exceptionally strong but gate-tunable spin-orbit interaction as the underlying mechanism, with a short associated spin-orbit length that can be tuned over a large range down to 3 nm for holes of heavy-hole mass. Our work demonstrates a spin-orbit qubit switch and establishes hole spin qubits defined in one-dimensional germanium/silicon nanostructures as a fast and highly tunable platform for quantum computation.

Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07 aF/\sqrt{Hz}. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1 microsecond of integration time.

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas., 4 pages, 5 figures (color)

We present electrical transport measurements in natural graphite and highly ordered pyrolytic graphite (HOPG), comparing macroscopic samples with exfoliated, nanofabricated specimens of nanometer thickness. The latter exhibit a very large c-axis resistivity $\rho_c$ -- much larger than expected from simple band theory -- and non-monotonic temperature dependence, similar to macroscopic HOPG, but in stark contrast to macroscopic natural graphite. A recent model of disorder-induced delocalization is consistent with our transport data. Furthermore, Micro-Raman spectroscopy reveals clearly reduced disorder in exfoliated samples and HOPG, as expected within the model -- therefore presenting further evidence for a novel paradigm of electronic transport in graphite., Comment: 5 pages, 4 figures (color)

The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can give rise to detrimental effects such as spin relaxation and decoherence. Here, we use an all-electrical, lateral GaAs spin valve to manipulate and investigate the inherent nuclear spin system. Hanle satellites are used to determine the nuclear spin relaxation rates for the previously unexplored temperature range down to 100 mK, giving T1 times as long as 3 hours. Despite metallic temperature dependence of resistivity, the observed relaxation rates show a sub-linear temperature dependence. This contrasts the Korringa relaxation mechanism observed in metals but is not inconsistent with hyperfine-mediated relaxation in a disordered, interacting conductor not far from the metal-insulator transition. We discuss possible relaxation mechanisms and further investigate inhomogeneities in the nuclear spin polarization., Comment: 6 pages, 4 (color) figures, Fig 1 reloaded on 111001