1. 3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages.
- Author
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Rubio, Jorge Moreno, Fang, Jie, Camarchia, Vittorio, Quaglia, Roberto, Pirola, Marco, and Ghione, Giovanni
- Subjects
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GALLIUM nitride , *MICROWAVE amplifiers , *FIELD-effect transistors , *FREQUENCY changers , *POWER amplifiers , *BANDWIDTHS , *IEEE 802.16 (Standard) - Abstract
We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3–3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3–3.6-GHz band, gain around 10 dB, and maximum power between 43 and 44 dBm, with saturated efficiency between 55% and 66%. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20 W suggests that the power utilization factor of the 10-W (Class A) GaN HEMT is excellent over the amplifier band. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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