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4 results on '"Vilcot, A."'

1. Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates

Author

M. Bensebti, S. Nacer, Abdelkader Aissat, Jean-Pierre Vilcot, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), LASICOM Laboratory, and Université Saâd Dahlab Blida 1 (UB1)

Subjects
Materials science, Band gap, chemistry.chemical_element, 02 engineering and technology, Strained quantum wells, 01 natural sciences, 7. Clean energy, [SPI]Engineering Sciences [physics], 0103 physical sciences, Optoelectronics, Gallium, 010306 general physics, Electronic band structure, Conduction band, Quantum well, business.industry, General Engineering, Lasers diode, Semiconductor, 021001 nanoscience & nanotechnology, Nitrogen, Wavelength, GaInNAs, GaInNAsSb/GaAs, chemistry, 0210 nano-technology, business
Abstract

In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase the emission wavelength. The reduction of energy is due to the interaction of the energy of the conduction band with the level of nitrogen and more the concentration of nitrogen increases, more the energy of the band gap decreases. On the other hand, the emission wavelength increases, the advantage of the incorporation of nitrogen in such structures is to vary the wavelength between 0.980 and [email protected] while exploiting of course the composition of gallium, composition of nitrogen and the thickness of the quantum well. Less temperature insensitive devices are so intended to be fabricated.

Published
2008

2. Investigation on the optical gain and threshold current density of Ga1−xInxAs1−y−zNySbz /GaAs strained quantum wells laser.

Author

Aissat, Abdelkader, Nacer, Said, Ykhlef, Farid, and Vilcot, Jean Pierre

Abstract

The aim of this work is to exploit the properties of the GaInAsNSb/GaAs alloy compressive highly strain structure. Ga1−xInxAs1−y−zNySbz has been found to be a potentially superior material to GaInAsN for optical fiber communications long wavelength laser (VCSELs) applications. Indeed, this material has the property that it can be grown on a GaAs substrate while having a bandgap smaller than that of GaInAs. We study the influence of nitrogen and antimony on the lattice parameter and then the strain. Also, the effect of these two elements on the optical gain and threshold current density is investigated. [ABSTRACT FROM PUBLISHER]

Published
2012
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3. Modeling of the absorption properties of Ga1−xInxAs1−yNy/GaAs quantum well structures for photodetection applications.

Author

Aissat, A., Bestam, R., Alshehri, B., and Vilcot, J.P.

Subjects
*INDIUM gallium arsenide, *GALLIUM arsenide, *QUANTUM wells, *METAL microstructure, *PHOTODETECTORS
Abstract

This work reports on theoretical studies on the GaInNAs material properties (bandgap, lattice mismatch, absorption coefficient) as grown on GaAs substrate. The Band Anti-Crossing (BAC) k ⋅ p 8 × 8 model has been used to determine the influence of indium and nitrogen concentrations on the position of conduction and valence bands. The incorporation of nitrogen at a level lower than 5% causes the split of the conduction band. For indium and nitrogen concentrations of 38% and 3.5%, respectively, the strained bandgap energy is 0.70 eV and the absorption coefficient of indium and nitrogen-rich compounds increases significantly. [ABSTRACT FROM AUTHOR]

Published
2015
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4. Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates

Author

Aissat, A., Nacer, S., Bensebti, M., and Vilcot, J.P.

Subjects
*WAVELENGTH division multiplexing, *NITROGEN, *SEMICONDUCTORS, *ELECTRIC conductivity
Abstract

Abstract: In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase the emission wavelength. The reduction of energy is due to the interaction of the energy of the conduction band with the level of nitrogen and more the concentration of nitrogen increases, more the energy of the band gap decreases. On the other hand, the emission wavelength increases, the advantage of the incorporation of nitrogen in such structures is to vary the wavelength between 0.980 and 1.3μm while exploiting of course the composition of gallium, composition of nitrogen and the thickness of the quantum well. Less temperature insensitive devices are so intended to be fabricated. [Copyright &y& Elsevier]

Published
2008
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