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The development of single-mode distributed feedback (DFB) lasers emitting high output powers in a broad wavelength range from 1980 to 2035 nm is reported. A unique feature of the development is the fabrication of lateral feedback gratings by nanoimprint lithography. We have varied a wide range of design parameters and studied their effect on the performance of the laser. The best uncoated devices exhibited a side-mode suppression ratio as high as $>50$ dB at output powers in excess of 14 mW. Moreover, a tuning range of over 12 nm was measured. After coating the facets with dielectric mirrors, the laser diodes could deliver an output power of more than 25 mW. In this letter, we prove the suitability of nanoimprint lithography to the fabrication of GaSb-DFB laser diodes by demonstrating the state-of-the-art devices made using imprint lithography. [ABSTRACT FROM PUBLISHER]

We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs- and GaSb based gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11 W of output power at a wavelength range of 1180-1200 nm and subsequent intracavity frequency doubling to generate yelloworange radiation with power exceeding 7W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2-3 μmwavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384 fs at 2 μm, the shortest pulses obtained from a semiconductor laser at this wavelength range. [ABSTRACT FROM AUTHOR]

The characteristics and the fabrication of a 1.9 μm superluminescent diode utilizing a cavity suppression element are reported. The strong suppression of reflections allows the device to reach high gain without any sign of lasing modes. The high gain enables strong amplified spontaneous emission and output power up to 60 mW in a single transverse mode. At high gain, the spectrum is centered around 1.9 μm and the full width at half maximum is as large as 60 nm. The power and spectral characteristics pave the way for demonstrating compact and efficient light sources for spectroscopy. In particular, the light source meets requirements for coupling to silicon waveguides and fills a need for leveraging to mid-IR applications photonics integration circuit concepts exploiting hybrid integration to silicon technology. [ABSTRACT FROM AUTHOR]