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Investigates ion implantation damage and regrowth process during thermal annealing of arsenic-ion-implanted gallium arsenide by transmission electron microscopy. Formation of high density of stacking faults during recrystallization process; Proposal for an atomic model on the formation of stacking faults; Recrystallization of high-energy As-implanted GaAs.

We have investigated the optoelectronic and structural properties of GaAs that has been implanted with Ar ions and subsequently annealed. The material exhibits all the basic optical and electronic characteristics typically observed in nonstoichiometric, As implanted or low-temperature-grown GaAs. Annealing of Ar implanted GaAs at 600 °C produces a highly resistive material with a subpicosecond trapping lifetime for photoexcited carriers. Transmission electron microscopy shows that, instead of As precipitates, characteristic for the nonstoichiometeric GaAs, voids ranging in size from 3 to 5 nm are observed in Ar implanted and annealed GaAs. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Structural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that these voids are responsible for the low activation efficiency of N implanted into GaAs. The results show that the N-induced enhancement of the donor activation efficiency can be achieved only in a void-free region of the implanted sample. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]