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The fabrication procedure of smart pixels based on a hybrid integration of compound semiconductor photonic devices with silicon CMOS circuits is described. According to the 0.8-μm design rule, CMOS receiver/transmitter circuits are designed for use in vertical-cavity surface-emitting laser (VCSEL)-based smart pixels, and 16×16 and 2×2 Banyan-switch smart-pixel chips are also designed. By using our polyimide bonding technique, we integrated GaAs pin-photodiodes hybridly on the CMOS circuits. The photodetector (PD)/CMOS hybrid receiver operated error free at up to 800 Mb/s. Successful optical/optical (O/O) operation (a bit rate up to 311 Mbit/s) of the 2×2 Banyan-switch smart-pixel chip implemented with another VCSEL chip is also demonstrated [ABSTRACT FROM PUBLISHER]

The polarization stability of 850-nm InAlGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) grown on GaAs (311)B substrate was investigated by comparing it with that of GaAs unstrained QW VCSEL grown on GaAs (311)B substrate. Photoluminescence measurement showed that strained QWs grown on GaAs (311)B substrate had larger anisotropy in optical gain than unstrained QWs. The VCSEL with strained QWs showed an orthogonal polarization suppression ratio (OPSR) as high as 21 dB under CW operation. Time-dependent OPSR measurement indicated that the strained QW VCSEL had higher polarization stability than the unstrained QW VCSEL under zero-bias modulation [ABSTRACT FROM PUBLISHER]

All metal-organic chemical vapor deposition (MOCVD) grown 850-nm-wavelength refractive-index-guided semiconductor-buried vertical-cavity surface-emitting laser is proposed and their performance is investigated. P/n-InGaP current-blocking region enables both selective regrowth and the formation of refractive-index-guided region which surrounds multiquantum-well active/core regions. We have achieved room temperature CW operation of the new types of vertical-cavity surface-emitting lasers. The minimum threshold current was 9.5 mA with 18 μm square mesa size at 30°C. The device lased at up to 70°C, and the maximum output power exceeds 1 mW at above 30°C. The near field pattern indicates the single-lobed output beam at low bias current [ABSTRACT FROM PUBLISHER]

The polarization stability of 850-nm GaAs-based vertical-cavity surface-emitting lasers (VCSELs) under dynamic operation was investigated by comparing the characteristics of VCSELs grown on (311)B and (100) GaAs substrates. Significantly larger suppression ratios of the two orthogonal polarization modes was obtained for VCSELs on (311)B substrates than those on (100) substrates under zero-bias modulation. Time-dependent orthogonal polarization suppression ratio measurements also showed that the polarization direction was more stable in the VCSEL on (311)B substrates than that on (100) substrates. Error-free transmission was realized from VCSELs on (311)B substrates with and without a polarizer in both back-to-back and 100-m multimode fiber transmission [ABSTRACT FROM PUBLISHER]

Examines the growth of vertical-cavity surface-emitting laser structures grown on gallium arsenide (311)B substrates by metalorganic chemical vapor deposition. Quality of carbon doped gallium arsenide and aluminum arsenide obtained by optimized growth conditions; Threshold current, voltage and maximum power of the substrates at 20 micrometer diameter size.