1. Microwave complementary doped-channel field-effect transistors
- Author
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Tsai, Jung-Hui, Chiu, Shao-Yen, Lour, Wen-Shiung, Liu, Wen-Chau, Li, Chien-Ming, Su, Ning-Xing, Wu, Yi-Zhen, and Huang, Yin-Shan
- Subjects
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FIELD-effect transistors , *DOPED semiconductors , *INDIUM compounds , *GALLIUM arsenide semiconductors , *ENERGY bands , *MICROWAVES - Abstract
Abstract: In this paper, the device performance and complementary inverter of the InGaP/InGaAs/GaAs doped-channel field-effect transistors (DCFETs) by two-dimensional semiconductor simulation are demonstrated. Due to the relatively large conduction (valance) band discontinuity at InGaP/InGaAs interface, it provides good confinement effect for transporting carriers in InGaAs channel layer for the n-channel (p-channel) device. The large gate turn-on voltage is achieved due to the employment of the wide energy-gap InGaP material as gate layer. The and are of 6.5 (2.1) and 25 (5) GHz for the n-channel (p-channel) device. Furthermore, the co-integrated structures, by the combination of n- and p-channel field-effect transistors, could form a complementary inverter and the relatively large noise margins are achieved. [Copyright &y& Elsevier]
- Published
- 2009
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