1. Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes.
- Author
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Roul, Basanta, Kumar, Mahesh, Rajpalke, Mohana K., Bhat, Thirumaleshwara N., Sinha, Neeraj, Kalghatgi, A. T., and Krupanidhi, S. B.
- Subjects
SAPPHIRES ,MOLECULAR beam epitaxy ,GALLIUM nitride ,PHOTOLUMINESCENCE ,RAMAN effect ,SCANNING electron microscopy - Abstract
GaN films were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). The effect of N/Ga flux ratio on structural, morphological, and optical properties was studied. The dislocation density found to increase with increasing the N/Ga ratio. The surface morphology of the films as seen by scanning electron microscopy shows pits on the surface and found that the pit density on the surface increases with N/Ga ratio. The room temperature photoluminescence study reveals the shift in band-edge emission toward the lower energy with increase in N/Ga ratio. This is believed to arise from the reduction in compressive stress in the films as is evidenced by room temperature Raman study. The transport studied on the Pt/GaN Schottky diodes showed a significant increase in leakage current with an increase in N/Ga ratio and was found to be caused by the increase in pit density as well as increase in dislocation density in the GaN films. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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