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Eu-doped GaN (GaN:Eu) is a promising solid-state material for quantum information devices owing to its ideal quantum levels. However, a decrease of Eu concentration and the unification of optical sites are required for these devices to access an Eu ion. In this article, the effect of Eu concentration on the optical properties of Mg-codoped GaN:Eu was evaluated. The photoluminescence intensity from Eu ions increased linearly with increasing Eu concentration up to 1 × 1019 cm−3, beyond which the intensity saturated. This resulted from the increase of the sharp luminescence line at 620.5 nm (site A), which has a large excitation cross section, with increasing Eu concentration in the range of low Eu concentrations; an excess Eu concentration leads to the formation of other types of optical sites with a low transfer efficiency or inactive sites. For a low Eu concentration of 3 × 1018 cm−3, all optical sites except a specific optical site corresponding to site A disappeared, and the unification of optical sites was suggested. This result is expected to be valuable to realize quantum information devices. [ABSTRACT FROM AUTHOR]

We report observations of random laser action in self-organized GaN nanocolumns. We have measured three samples with different filling fractions and investigated the dependence of the lasing property on the random configuration of nanocolumns. Numerical calculations based on a finite-difference time-domain method have also been performed and the comparison with the experimental results shows a clear relationship between the strength of light localization and the occurrence of random laser action. [ABSTRACT FROM AUTHOR]