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20 results on '"Zhao, Hongping"'

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1. Thin channel Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown.

2. Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates.

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3. Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits.

4. 7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management.

5. Trap characterization of high-growth-rate laser-assisted MOCVD GaN.

6. Investigation of carbon incorporation in laser-assisted MOCVD of GaN.

7. Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2.

8. GaN Power p–n Diodes on Hydride Vapor Epitaxy GaN Substrates with Near‐Unity Ideality Factor and <0.5 mΩ cm2 Specific On‐Resistance.

9. Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride.

10. Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications.

11. Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension.

12. Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes.

13. Analysis of Interdiffused InGaN Quantum Wells for Visible Light-Emitting Diodes.

14. Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells.

15. Efficient Terahertz Generation Within InGaN/GaN Multiple Quantum Wells.

16. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

17. Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77eV) InN grown on GaN/sapphire using pulsed MOVPE

18. Lifetime laser damage performance of <italic>β</italic>-Ga2O3 for high power applications.

19. Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells.

20. Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2.