1. Thin channel Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown.
- Author
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Saha, Chinmoy Nath, Vaidya, Abhishek, Nipu, Noor Jahan, Meng, Lingyu, Yu, Dong Su, Zhao, Hongping, and Singisetti, Uttam
- Subjects
METAL organic chemical vapor deposition ,MOLECULAR beam epitaxy ,BREAKDOWN voltage ,METAL oxide semiconductor field-effect transistors ,GALLIUM nitride - Abstract
This Letter reports a highly scaled 90 nm gate length β-Ga
2 O3 (Ga2 O3 ) T-gate MOSFET with a power gain cutoff frequency (fMAX ) of 55 GHz. The 60 nm thin epitaxial Ga2 O3 channel layer was grown by molecular beam epitaxy, while the highly doped (n++) source/drain regions were regrown using metal organic chemical vapor deposition. Maximum on current (IDS,MAX ) of 160 mA/mm and trans-conductance (gm ) around 36 mS/mm were measured at VDS = 10 V for LSD = 1.5 μ m device. Transconductance and on current are limited by high channel sheet resistance (Rsheet ). Gate/drain breakdown voltage of 125 V was measured for LGD = 1.2 μ m. We extracted 27 GHz current gain cutoff frequency (fT ) and 55 GHz fMAX for 20 V drain bias for unpassivated devices. While no current collapse was seen initially for both drain and gate lag measurements for 500 ns pulse, moderate current collapse was observed after DC, RF measurements caused by electrical stressing. We calculated a high fT . VBR product of 3.375 THz V, which is comparable to the state-of-the-art GaN HEMTs. This figure of merit suggests that Ga2 O3 could be a potential candidate for X-band application. [ABSTRACT FROM AUTHOR] more...- Published
- 2024
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