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2. Surface photovoltage in heavily doped GaN:Si,Zn.

3. Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K.

4. Higher than 90% internal quantum efficiency of photoluminescence in GaN:Si,Zn.

5. Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence.

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