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A double Q-switch (DQS) Ho:Sc 2 SiO 5 laser modulated by a acousto-optic modulators (AOM) combined with a Cr 2+ :ZnSe saturable absorber (SA) was reported for the first time. The actively Q-switch (AQS) and passively Q-switch (PQS) were also studied. For the DQS mode, a maximum average output power of 2.49 W under the incident pump power of 12.5 W was obtained, corresponding to a slope efficiency of 24%. The characteristics of the DQS Ho:SSO laser versus different repetition frequencies (RF) of the AOM were researched. The maximum single-pulse energy of the DQS Ho:SSO laser was calculated to 1.98 mJ. The maximum peak power of the DQS Ho:SSO laser was 49.5 kW. The output beam quality factor M 2 of DQS Ho:SSO laser was measured to be 1.15 with the highest peak power by knife-edge method at different positions. [ABSTRACT FROM AUTHOR]

Represented here is an electron-optic Q switch Ho:ScSi 2 O 5 laser. A RTP crystal was employed as the Q-switch element. It is the first time to demonstrate an electron-optic Q switch Ho:ScSi 2 O 5 laser, whose maximum single-pulse energy reaches around 102 mJ, corresponding to a maximum peak power of 2.91 MW. The laser performance is investigated as a function of the different repetition frequencies and incident pump power. We focus on the low frequencies (1, 2, 5, 8, 10, and 20 Hz) in this contribution, aiming to obtain a higher single-pulse energy. The beam quality M 2 factor of the electron-optic Q switch Ho:ScSi 2 O 5 laser is measured by knife-edge method, which is calculated to be 1.24. [ABSTRACT FROM AUTHOR]