Search

RFID middleware for massive data focused on the performance of server-side processing to bring pressure on the issue, a new for mobile devices can be flexibly configured RFID middleware (SMM). SMM can be used for mobile devices, has a better platform independence , can be deployed with multiple operating systems ; abstract objects by device , user via the user interface (UI) and a standard Web interface to control and manage a variety of mobile devices . Meanwhile, SMM also provides data synchronization. Experimental results show that, SMM has low energy consumption; high efficiency advantages can effectively reduce server stress and improve system performance.

From analysis and design,it concluded that innovation was the key to promoting the development of product design.The scheme of the clean trolley functional innovative design was proposed in this paper, which includes the transmission mechanism, sweeping brush mechanism and Sprinkling mechanism.In design processing,the 3-dimensional model of clean trolley was established and the motion simulation analysis was also presented.The results showed that the presented scheme satisfy the design requirements and have the better performance.

In this paper, a novel Automatic Malware Signature Discovery System for AV cloud is proposed to generate malware signatures from both static and dynamic aspects. It keeps a good workload balance between the desktop and cloud services. It can automatically generate a lightweight signature database with the size hundreds times smaller than traditional signature ones. In the AV cloud model, users do not need to install a large virus signature file, but a lightweight set of cloud signatures. The benefits include easy deployment, low costs of operation, and fast signature updating. Further, Automatic Malware Signature Discovery System signatures can be easily integrated into existing AV products.

In view of the existing problem of the traditional aluminium ingot stacking practices, it was important significance to research and develop a stack-manipulator that includes various functions to do portage and stack. According to the demand of stacking, the motion system of the Stack-manipulator based on four degrees was finished. The kinematics equation of the manipulator was set up using the D-H theory, On this base, Some of the kinematics problems of this stack-manipulator were discussed and these reliable basis were provided for the research of the manipulators dynamics and control and trajectory planning.

Plasma enhanced atomic layer deposition (PEALD) method can decrease film growing temperature, and allow in-situ plasma treatment. LaAlO3 films were deposited with PEALD at 180°C. High resolution transmission electron microscopy (HRTEM) results exhibited amorphous microstructure of both films even after rapid thermal annealing (RTA) at 800°C. X-ray photoelectron spectroscopy (XPS) spectra suggested that the valence-band offset between the LaAlO3 film and the substrate was 3.3 eV. The electrical experimental results indicated that the leakage current densities were 0.10mA/cm2 and 0.03mA/cm2 respectively at a gate bias of |Vg-Vfb|=1V and the equivalent oxide thicknesses (EOT) of them were 1.2 nm and 1.4 nm, respectively. The densities of interfacial states were calculated to be 1.70×1012eV-1cm-2 and 1.09×1012eV-1cm-2, respectively.

In situ NH3 plasma nitridation was utilized to passivate InP surface, HfLaOx film was grown by plasma enhanced atom layer deposition method, and the HfLaOx film remain amorphous after 500°C annealing. High-resolution transmission electron microscopy (HRTEM) images showed that in situ NH3 plasma nitridation process make the boundary between InP and HfLaOx smooth and sharp, and could suppress the formation of the interfacial layer. X-ray photoelectron spectra (XPS) results indicated In-N and P-N bonds were formed on the nitride InP surface. The electrical measurements indicated in situ NH3 plasma nitridation process reduced the hysteresis improved capacitance density and to 7 mV, a sharp transition from depletion to accumulation was observed, the interfacial density states (Dit) of the sample with nitridation was 1.67×1012 cm2 eV1, and the equivalent oxide thickness (EOT) was 0.6 nm. The leakage current was 1.5 mA/cm2 at Vg-Vfb=1V.

In this work, we present the results of an investigation into the effectiveness of varying ammonium sulphide (NH4)2S concentrations in the passivation of n-type GaAs. Samples were degreased and immersed in aqueous (NH4)2S solutions of concentrations 22% and 10%for 10 min at 295 K, immediately prior to plasma enhanced atomic layer deposition of LaAlO3. The chemical bonding state of (NH4)2S treated GaAs surface were investigated by X-ray photoelectron spectroscopy (XPS), which indicate that Sulfur passivation can reduce intrerfacial GaAs-oxide formation. Transmission electron microscopy (TEM) was implemented to characterize the interface morphology. Finally, capacitance-voltage (C-V) and leakage current density-voltage (J-V) measurement were used to characterize the electrical properties of LaAlO3 films.

In this work, La2O3 gate dielectric film was deposited by plasma enhanced atomic layer deposition. we investigate the effect of surface preparation of GaAs substrate, for example, native oxide, S-passivation, and NH3 plasma in situ treatment. The interfacial reaction mechanisms of La2O3 on GaAs is studied by means of X-ray photoelectron spectroscopy(XPS), high-resolution transmission electron microscopy(HRTEM) and atomic force microscope (AFM). As-O bonding is found to get effectively suppressed in the sample GaAs structures with both S-passivation and NH3 plasma surface treatments.

HfO2high-k dielectric films of 4nm and 5nm were both grown on Si substrate with the method of PEALD at 160°C. Both were treated with rapid thermal annealing (RTA) process at 500°C. High resolution transmission electron microscopy (HRTEM) indicated both films were not crystallized. X-ray photoelectron spectra (XPS) indicated that Hf-silicate was formed in the interfacial layer, and the valence-band offset (VBO) between the dielectric film and the substrate interface was calculated to be 3.5 eV. The electrical measurements indicated that the leakage current densities of the four and five nanometers’ sample were 1.0mA/cm2and 0.8mA/cm2at gate bias of 1V, and the equivalent oxide thicknesses of them were 0.9nm and 1.2nm respectively. Densities of interfacial states of them were calculated.

The paper introduces the design objective and design scheme of mobile agent-based X.509 certificate management system, and describes the key technologies such as encryption, the certificate processing format and coding, secure communication protocols such as SSL in detaile.

The impact of the cold-side temperature and moisture to frost heave were obtained by studying frost heaving test in open system. Frost heave ratio increased linearly with the decrease of cold-side temperature and moisture. Frost heave force increased with the decrease of cold-side temperature and increase of moisture. In addition, the soil physical properties variation laws was gained during freezing in the test, like moisture and dry density. By analysising the test data of frost heave ratio and frost heave force, the relationship between frost heave ratio and frost heave force were acquired. The results had important practical value and theoretical significance to the freezing shaft sinking and artificially freezing techniques applied in urban underground engineering.