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High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors (FETs) and great potential for applications in future digital integrated circuits (ICs). However, high-performance N-type FETs (N-FETs) have not yet been implemented with A-CNTs, making development of complementary metal-oxide-semiconductor (CMOS) technology, a necessary component for modern digital ICs, impossible. In this work, we reveal the mechanism hindering the realization of A-CNT N-FETs contacted by low-work-function metals and develop corresponding solutions to promote the performance of N-FETs to that of P-type FETs (P-FETs). The fabricated scandium (Sc)-contacted A-CNT N-FET with a 100 nm gate length exhibits an on-state current (

Silicon-based complementary metal-oxide-semiconductor (CMOS) has been the mainstream logic style for modern digital integrated circuits (ICs) for decades but will meet its performance limits soon. Extensive investigations have thus been carried out using other semiconductors, especially those with extremely high carrier mobility. However, these materials usually have small or even zero band gap, which leads inevitably to large leakage current or voltage loss in ICs based on these semiconductors. In this work, we propose and demonstrate a strengthened CMOS (SCMOS) logic style using modified field-effect transistors (FETs) to solve this problem, that is, to achieve high performance, utilizing the high carrier mobility in these materials, and to reduce the current leakage resulting from their small band gap. Conventional CMOS FETs are modified to have an asymmetric structure where an additional assistant gate is introduced near the drain to further lower the potential barrier in on-state and to increase the barrier in off-state. SCMOS ICs are constructed using these modified asymmetric CMOS FETs, which demonstrate perfect rail-to-rail output with negligible voltage loss and 3 orders of magnitude suppression of the static power consumption and an operating speed similar to or even higher than that of CMOS ICs. Here, SCMOS is demonstrated using carbon nanotubes, but, in principle, this logic style can be used in ICs based on any small-band-gap semiconductors to provide simultaneously high performance and low power consumption.

Gene transfection has been widely studied due to its potential applications in tissue repair and gene therapy. Many studies have focused on designing gene carriers and developing novel transfection techniques. However, the influence of cell size, shape and elongation on gene transfection has rarely been investigated. In this study, poly(vinyl alcohol)-micropatterned surfaces were prepared to precisely manipulate the size, shape and elongation of mesenchymal stem cells, and the influences of these factors on gene transfection were investigated. Cell size showed a significant influence on gene transfection. Elongation could affect the gene transfection of large cells but not small cells. Cells with a large spreading area and high aspect ratio showed high transfection with exogenous plasmid DNA. In particular, the transfection efficiency was the highest in micropatterned cells with a spreading area of 5024 μm2 and an aspect ratio of 8 : 1. In contrast, cell shape had no significant influence on gene transfection. The different influences of cell size, shape and elongation were correlated with their respective impacts on cytoskeletal structures, cellular nanoparticle uptake and DNA synthesis. Cells with a large size and elongated morphology showed well-organized actin filaments with a high cellular modulus, therefore promoting cellular nanoparticle uptake and DNA synthesis. Cells with different shapes showed similarities in actin filament organization, cellular modulus, uptake capacity and DNA synthesis. The results suggest the importance of cell size and elongation in exogenous gene transfection and should provide useful information for gene transfection and gene therapy.

The longtime vacancy of high-performance complementary metal-oxide-semiconductor (CMOS) technology on plastics is a non-negligible obstacle to the applications of flexible electronics with advanced functions, such as continuous health monitoring with in situ signal processing and wireless communication capabilities, in which high speed, low power consumption, and complex functionality are desired for integrated circuits (ICs). Here, we report the implementation of carbon nanotube (CNT)-based high-performance CMOS technology and its application for signal processing in an integrated sensor system for human body monitoring on ultrathin plastic foil with a thickness of 2.5 μm. The performances of both the p- and n-type CNT field-effect transistors (FETs) are excellent and symmetric on plastic foil with a low operation voltage of 2 V: width-normalized transconductances (gm/W) as high as 4.69 μS/μm and 5.45 μS/μm, width-normalized on-state currents reaching 5.85 μA/μm and 6.05 μA/μm, and mobilities up to 80.26...

Micro- and nano-structured substrates have been widely used in the biomedical engineering field. Their precise control of cell morphology makes them promising for investigating various cell behaviors. However, regulation of cell functions using micro-nano hybrid patterns is rarely achieved. Since the cell microenvironment in vivo has complex micro- and nano-structures, it is desirable to use micro-nano hybrid patterns to mimic the microenvironment to control cell morphology and disclose its influence on stem cell differentiation. In this study, poly(vinyl alcohol) (PVA) micro-stripes with different spacings (50 μm, 100 μm and 200 μm) were constructed on polystyrene (PS) nano-grooves to prepare micro-nano hybrid patterns where the direction of the PVA micro-stripes and PS nano-grooves was parallel or orthogonal. Human bone marrow-derived mesenchymal stem cells (hMSCs) cultured on the micro-nano hybrid patterns showed a different cell alignment and elongation dependent on the PVA micro-stripe spacing and orientation of the PS nano-grooves. Comparison of the influence of cell alignment and aspect ratio on differentiation of hMSCs indicated that myogenic differentiation was predominantly regulated by cell alignment and osteogenic differentiation by cell elongation, while adipogenic differentiation was regulated neither by cell alignment nor by cell elongation.

We have fabricated top-gated ambipolar field-effect transistors (FETs) based on solution-derived carbon nanotube (CNT) network films, and then constructed inverters and ring oscillators (ROs) that can work under supply voltages as low as 0.2 V owing to the high uniformity of the devices. Significant improvements were achieved in the performance of these CNT-based ambipolar FETs and CMOS-like circuits by scaling down the gate length of the CNT FETs and optimizing the device structure and RO layout. In particular, the optimized five-stage RO is shown to present a record high oscillation frequency of up to 17.4 MHz with a propagation time of 5.6 ns at a 12-V working voltage. The CNT film-based ROs were used as carrier-wave generators in radio-frequency systems to demonstrate a complete signal transmission process. These results suggest that CNT thin film-based FETs and integrated circuits may soon find their way to radio-frequency applications with a frequency band of 13.56 MHz.

Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

Gene transfection has broad applications in bioengineering and biomedical fields. Although many gene carrier materials and transfection methods have been developed, it remains unclear how cell morphology including cell spreading and elongation affects gene transfection. In this study, human bone marrow-derived mesenchymal stem cells (hMSCs) were cultured on micropatterns and transfected with cationic pAcGFP1-N1 plasmid complexes. The relationship between the cell morphology of hMSCs and gene transfection was investigated using micropatterning techniques. Spreading and elongation of hMSCs were precisely controlled by micropatterned surfaces. The results showed that well-spread and elongated hMSCs had high transfection efficiency. Analysis of the uptake of exogenous genes and DNA synthesis activity indicated that the well-spread and elongated cell morphology promoted gene transfection through enhanced uptake of the cationic complexes and accelerated DNA synthesis. The results should provide useful information for understanding of cell morphology on gene transfection and development of efficient gene transfection methods.

A new multi-effect solar desalination system based on humidification–and dehumidification (HDH) process was investigated experimentally in this paper. Several hourly yields with operation temperatures were tested and analyzed. The warm saline water is sprayed upon the porous ball humidifiers, which is simple and effective for enhancing the evaporation process. A mathematical model based on the mass and energy balances in each unit of the system is developed which is used to optimize the test. In addition the performance ratio (PR) of the device was investigated under different feeding water mass flow rates and heating temperature conditions. The experimental results indicate that the yield of system increases with the increase in water flow rate and air flow rate. The maximum PR of the system at the heating temperature of 85 °C can reach up to about 2.65. When the heating temperature increases from 60 to 90 °C and the feed water flow rate is 2 t/h, the fresh water yield increases from 59.41 to 182.47 kg/h. The yield per unit volume is calculated as 22 kg/m3 h. The numerical results based on the mathematical model are well in agreement with the experimental results. The maximum relative deviation is only 5%.

This paper presents a two-stage multi-effect desalination system based on humidification–dehumidification process. The sketch of two-stage multi-effect humidification–dehumidification desalination process is given. The good quality of distilled water obtained by this novel concept favors its use for producing water for drinking and irrigation. A mathematical model based on mass and energy balances in each component of the system is developed. The numerical model is used to investigate the performance of this kind of installation exposed to a variation of the control parameters. The fresh water production can reach 72.6 kg/h and the gained output ratio (GOR) can reach 2.44, because it recycles and reutilizes latent heat of condensation and the residual heat in the brine. A series of experiments was conducted and compared with the simulation results to validate the developed models. As a result, the proposed models can be used for describing the behavior of such a type of desalination system.

Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10(-13) A, high current on/off ratio of larger than 1 × 10(8), negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.

While constructing general integrated circuits (ICs) with field-effect transistors (FETs) built on individual CNTs is among few viable ways to build ICs with small dimension and high performance that can be compared with that of state-of-the-art Si based ICs, this has not been demonstrated owing to the absence of valid and well-tolerant fabrication method. Here we demonstrate a modularized method for constructing general ICs on individual CNTs with different electric properties. A pass-transistor-logic style 8-transistor (8-T) unit is built, demonstrated as a multifunctional function generator with good tolerance to inhomogeneity in the CNTs used and used as a building block for constructing general ICs. As an example, an 8-bits BUS system that is widely used to transfer data between different systems in a computer is constructed. This is the most complicated IC fabricated on individual CNTs to date, containing 46 FETs built on six individual semiconducting CNTs. The 8-T unit provides a good basis for constructing complex ICs to explore the potential and limits of CNT ICs given the current imperfection in available CNT materials and may also be developed into a universal and efficient way for constructing general ICs on ideal CNT materials in the future.