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Gold nanorods are of great significance in biomedical and sensing applications due to their local surface plasmon resonance absorption. The silver-mediated seeding method was used to prepare gold nanorods, the longitudinal local surface plasmon resonance (LSPR) absorption of the prepared gold nanorods was monitored, and the growth kinetics of the gold nanorods were discussed. The results show that the growth process of gold nanorods is characterized by a first-order reaction, and its activation energy is about 54.4 kJ/mol. This experimental conclusion provides a good theoretical guide for the preparation of gold nanorods during application research.

MXenes have drawn considerable attention in both academia and industry due to their attractive properties, such as a combination of metallic conductivity and surface hydrophilicity. However, to the best of our knowledge, the potential use of MXenes in non-volatile resistive random access memories (RRAMs) has rarely been reported. In this paper, we first demonstrated a RRAM device with MXene (Ti3C2) as the active component. The Ti3C2-based RRAM exhibited typical bipolar switching behavior, long retention characteristics, low SET voltage, good mechanical stability and excellent reliability. By adjusting different compliance currents in the SET process, multi-state information storage was achieved. The charge trapping assisting hopping process is considered to be the main mechanism of resistive switching for this fabricated Ti3C2-based RRAM, which was verified by conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). Moreover, this flexible Ti3C2-based RRAM, with good mechanical stability and long retention properties, was successfully fabricated on a plastic substrate. Ti3C2-based RRAMs may open the door to additional applications and functionalities, with high potential for application in flexible electronics.

Silver nano-crystals in the forms of nanowires and triangular nanoplates were successfully synthesized through a polyol synthesis. The morphologies changed from nanowires to triangular nanoplates by adjusting the HNO3 concentration. The samples were systematically characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscropy, thermogravimetric analysis and UV–visible Spectra. Examination of nanoparticles at different stages of the reaction revealed that the circular nanoparticles, twinned seeds grew to become triangular nanoplates and nanowires respectively.

A polyol reducing approach has been applied to synthesize silver nanoplates with an average thickness of 50 nm and edge length of 3 μm in the presence of poly (vinylpyrrolidone) (PVP) and HNO3. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscropy (TEM), and electron diffraction are used to characterize these silver nanoplates. Findings indicate that the nanoplates are single crystals and with their basal plane as (1 1 1) lattice plane. On the basis of the results from thermogravimetric analysis (TG), Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy, a crystal growth mechanism based on the rivalrous adsorption between PVP and CN− ions on the surface of silver nanoplates is supposed to explain the crystal anisotropic growth.

Photonic memories as an emerging optoelectronic technology have attracted tremendous attention in the past few years due to their great potential to overcome the von Neumann bottleneck and to improve the performance of serial computers. Nowadays, the decryption technology for visible light is mature in photonic memories. Nevertheless, near-infrared (NIR) photonic memristors are less progressed. Herein, an NIR photonic memristor based on MoS2 -NaYF4 :Yb3+ , Er3+ upconversion nanoparticles (UCNPs) nanocomposites is designed. Under excitation by 980 nm NIR light, the UCNPs show emissions well overlapping with the absorption band of the MoS2 nanosheets. The heterostructure between the MoS2 and the UCNPs acting as excitons generation/separation centers remarkably improves the NIR-light-controlled memristor performance. Furthermore, in situ conductive atomic force microscopy is employed to elucidate the photo-modulated memristor mechanism. This work provides novel opportunities for NIR photonic memory that holds promise in future multifunctional robotics and electronic eyes.

Vertically aligned ZnO nanowires with high aspect ratio were prepared by chemical vapor deposition on Si substrate, which had been catalyzed by the polar plane in [0001] direction of ZnO nanorods prepared by the hydrothermal method. Morphology and structure characterizations showed that the as-grown nanowires had the single-crystal hexagonal wurtzite structure with a [0001] growth direction. Energy Dispersive X-ray (EDX) measurement indicated the as-grown ZnO nanowires had a good deal of oxygen vacancies owing to the high operation temperature. Temperature-dependent photoluminescence measurement revealed that the peak of near-band-edge emission shifted from 380 to 387 nm with the increase of temperature from 150 to 300 K. The high intensity of the green peak at 525 nm highlighted the potential application in visible light emitting diodes.