1. \ZrTiOx-Based Resistive Memory With MIS Structure Formed on Ge Layer.
- Author
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Wu, Yung-Hsien, Wu, Jia-Rong, Hou, Chin-Yao, Lin, Chia-Chun, Wu, Min-Lin, and Chen, Lun-Lun
- Subjects
ELECTRIC properties of metallic films ,METALLIC oxides ,GERMANIUM ,RANDOM access memory ,PLATINUM electrodes ,MICROFABRICATION ,SWITCHING theory ,METAL insulator semiconductors - Abstract
Resistive random access memory (RRAM) cells with a thin oxygen-deficient \ZrTiOx film topped by a Ti oxygen-gettering layer and a Pt electrode were fabricated on n-Ge layer, and the switching mechanism, as well as electrical characteristics, was explored. The RRAM cells demonstrate a stable bipolar switching behavior without the requirement of a forming process. Because of the existence of a larger amount of interface traps which would trap carriers and help build a favorable electric field for the drift of oxygen vacancies, the RRAM cells possess lower SET and RESET voltages compared to those fabricated on n-Si layer. With many promising properties such as a large sensing margin of 300 times, a high operation speed of 250 ns, a robust endurance of \10^5\ \cycles, and a long data retention time of up to 10 years, the \ZrTiOx-based RRAM cells exhibit a promising perspective as nonvolatile memory devices for Ge-based technology. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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