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Abstract: Sputtered yttrium metal forms a thin hole-barrier contact on both p- and n-type germanium semiconductor detectors. Yttrium contacts can provide a sufficiently high hole barrier to prevent measurable contact leakage current below ∼120K. Detectors having yttrium contacts produce good gamma-ray spectroscopy data. [ABSTRACT FROM AUTHOR]

Abstract: The rectification properties of sputtered amorphous germanium contacts made under a variety of conditions on germanium detectors have been measured as a function of temperature and electric field. The leakage current increased as a function of voltage above depletion voltage. The rectifying amorphous–crystalline heterojunction theory derived by Döhler and Brodsky describes the behavior well. Values of barrier height were measured to be ∼0.30–0.35eV and the density of states was found to be NF∼1018eV-1cm-3. [Copyright &y& Elsevier]