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Abstract: The effect of activation temperature on the degree of reduction of dense and porous TiZrV films was investigated by synchrotron radiation photoemission spectroscopy. The dense and porous TiZrV films have similar composition and thickness, and their specific surface areas are 2 m2/g and 13 m2/g, respectively. Comparing the previous results of the porous TiZrV film [Chien-Cheng Li, Jow-Lay Huang, Ran-Jin Lin, Chia-Hao Chen, Ding-Fwu Lii, Thin Solid Films 515, (2006) 1121.], the degree of activation of the porous TiZrV film is lower than that of the dense TiZrV film. To complete the activation treatment of the dense and porous TiZrV films, the activation temperature must be higher than 350 °C or the activation time must be longer than 30 min. [Copyright &y& Elsevier]

Abstract: TiZrV films, grown at the deposition angles of 0° and 70°, were used for the study of the oxygen-adsorption process. When the deposition angle is 0°, the appearance of the film is dense columnar structure. However, the film grown at the glancing angle of 70° is composed of porous and isolated columns, which are made of fine clusters. The activated TiZrV films have the capability to absorb oxygen at room temperature. The component Zr is more easily oxidized than Ti and V components when the TiZrV film is exposed in oxygen. The content of oxidized Ti and oxidized V does not linearly increase with the increase of oxygen exposure when there is a metallic Zr component on the surface of the film. [Copyright &y& Elsevier]

Abstract: Highly porous TiZrV film getters on (100) silicon substrates have been successfully grown by the glancing angle dc magnetron sputtering method. The glancing angle is defined as the angle between the surface normal to the substrate and the surface normal to the target. The main deposition parameters that produce the porous TiZrV films are the pressure of sputtering gas Ar and glancing angle at room temperature. The larger the glancing angle is, the higher the porosity and specific surface area of the TiZrV films are. The specific surface area of the dense and porous TiZrV films is 2 m2/g and 13 m2/g, respectively. The diameter of columnar width and inter-distance between the columnar crystals of the porous film are 200 nm and 50 nm, respectively. The columnar width of dense TiZrV films is about 100 nm. The porous TiZrV films have a larger capability to absorb oxygen than that of the dense TiZrV films. [Copyright &y& Elsevier]

Abstract: Highly porous Ti and TiZrV film getters on (100) silicon substrates, grown by the glancing angle deposition of dc magnetron sputtering method, were used to study the activation process. The effect of activation temperature on the reducing degree of the porous Ti and TiZrV films were investigated by synchrotron radiation photoemission spectroscopy (SRPES). Elemental carbon absorbed on the surface of the Ti film, exposed in air, will be transformed to a Ti carbide phase, however, that which is on the surface of the TiZrV film will be completely removed by heat at 250 °C or above. The oxidized Ti in a porous TiZrV film is more easily reduced than that in the porous Ti films. The breakdown of V–O and Ti–O bonds on the TiZrV film surface is easier than that of the Zr–O bond. We suggest that the decrease of reducing temperature of oxidized TiZrV, comparing with that of oxidized Ti, is caused by the displacement reaction of Zr on oxidized Ti or oxidized V. [Copyright &y& Elsevier]

Abstract: The porous Ti film getters on (100) silicon substrates were prepared using the glancing angle deposition of dc (direct current) magnetron sputtering method. The main deposition parameters that produce the porous Ti films are the low substrate temperature and high glancing angle. The larger the glancing angle is, the higher the porosity of the Ti films is. The porous films, grown at the glancing angle of 70° and room substrate temperature, are composed of nano-columnar crystalline crystals. The size and inter-distance between the columnar crystals are 70 nm and 30 nm, respectively. The porous Ti films have larger capability to absorb the oxygen than that of dense Ti films and Si substrate. The suitable operation condition of porous Ti film getters was also established. [Copyright &y& Elsevier]