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Photoluminescence (PL) properties of PbSe and Sr2+‐doped PbSe quantum dots (QDs) doped in silicate glasses were investigated by changing the excited laser wavelength and intensity. When BaO was replaced by SrO, the Sr2+‐doped PbSe QDs formed and showed large blue‐shifts in both absorption and PL bands compared to the PbSe QDs. It is attributed to the increasing in band gap resulted by the incorporation of Sr2+ ions into PbSe QDs. These two kinds of QDs were excited by the laser with the wavelengths of 1319 and 1532 nm. When rising the pumping intensity up to 1000 mW, the PL intensity from Sr2+‐doped PbSe QDs monotonically increased, while, the PL intensity from PbSe QDs reached maximum at pumping intensity at ~200 mW (λex = 1319 nm) and ~300 mW (λex = 1532 nm). The good resistance to photodarkening of Sr2+‐doped PbSe QDs is indicated passivation effect on the surface defects from Sr2+ ions doping. For Sr2+‐doped PbSe QDs the anti‐Stokes photoluminescence (ASPL) were observed when using both 1319 and 1532 nm excitation. The integrated intensity of the ASPL is linear with the excitation intensity, which indicates that the ASPL belongs to the phonon‐assisted one‐photon process. And the ASPL intensity as a function of excitation intensity shows a size dependence of the QDs. [ABSTRACT FROM AUTHOR]

CdS/Cd 1−x Zn x S sandwich-structured quantum dots (QDs) were precipitated in silicate glasses with high quantum efficiency up to 53%. The QDs were composed by a CdS core with a Cd 1−x Zn x S shell of about 1–3 nm in thickness through heat-treatment at 550 °C for 10 h. With the increased heat-treatment temperature, the intensity ratio between the intrinsic emission and the defects emission increased and the Stokes shift decreased from 84 to 4 meV, which was caused by both the increased size and passivated surface defects of the QDs. [ABSTRACT FROM AUTHOR]