Search

Abstract: In order to alleviate the effect of the surface defects on the emission properties of quantum dots, copper ions‐doped ZnSe quantum dots (QDs) in the glasses are prepared using melt‐quenching and subsequent thermal annealing methods. For glasses without copper doping, tunable band‐edge emission from ZnSe QDs is achieved. For glasses with copper doping, efficient energy transfer from ZnSe QDs to copper ions is observed, and efficient broad band emission from copper ions is realized at the expense of the band‐edge emission of ZnSe QDs. Absorption spectra, size‐dependent broad‐band emission spectra and electron spin resonance spectra show the cupric ions are doped into the ZnSe QDs. Results reported here shows that doping of transition‐metal ions into semiconductor QDs in glasses is promising for development of high efficient luminescent glasses. [ABSTRACT FROM AUTHOR]

CdS/Cd 1−x Zn x S sandwich-structured quantum dots (QDs) were precipitated in silicate glasses with high quantum efficiency up to 53%. The QDs were composed by a CdS core with a Cd 1−x Zn x S shell of about 1–3 nm in thickness through heat-treatment at 550 °C for 10 h. With the increased heat-treatment temperature, the intensity ratio between the intrinsic emission and the defects emission increased and the Stokes shift decreased from 84 to 4 meV, which was caused by both the increased size and passivated surface defects of the QDs. [ABSTRACT FROM AUTHOR]

Modulation of the band gap energy and diameter of quantum dots (QDs) formed in glasses is important to achieve the optimized performance for applications as infrared light sources, lasers, saturable absorbers, etc. Absorption and photoluminescence of PbS QDs were extended into mid-infrared wavelength range in glasses containing small amount of lead but oversaturated with sulfur. Dual-band photoluminescence of PbSe QDs was prepared in oxyfluoride glass-ceramics containing BaF2 nanocrystals. By introducing SnO in the glasses, alloyed Pb1-xSnxSe QDs with smaller band gap energies were formed in glasses, and mid-infrared photoluminescence of Pb1-xSnxSe QDs at ~2570 nm in wavelength was achieved. [ABSTRACT FROM AUTHOR]

Abstract: Optical properties of PbS quantum dots (QDs) precipitated inside the oxide glass matrix were investigated. Photoluminescence (PL) from the PbS QDs showed peak wavelengths located at 1170–1680nm with widths of 150–550nm. Radii of QDs in glasses were 2.3–4.7nm depending upon the thermal treatment. Peak wavelengths of PL bands shifted as much as 70nm as the temperatures and excitation irradiances increased. Calculated effective local temperatures indicated that these shifts of PL spectra were associated with local heating induced by the temperatures and laser beam. [Copyright &y& Elsevier]

Abstract: CdSe quantum dots (QDs) were precipitated in silicate glasses under various durations and temperatures of heat-treatment. Absorption and photoluminescence (PL) spectra of the QDs showed the quantum confinement effect from CdSe QDs. When the glass was heat-treated for 10h, estimated average QD sizes increased from 5.2nm when the glass was heat-treated at 490°C and to 6.9nm when it was treated at 500°C. When the glass was heat-treated at 480°C, estimated average QD sizes were 4.9nm after 20h and 5.3nm after 30h. The PL peak position was independent of the excitation wavelengths; this result indicates that the size distribution of CdSe QDs was narrow. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) properties of PbSe and Sr2+‐doped PbSe quantum dots (QDs) doped in silicate glasses were investigated by changing the excited laser wavelength and intensity. When BaO was replaced by SrO, the Sr2+‐doped PbSe QDs formed and showed large blue‐shifts in both absorption and PL bands compared to the PbSe QDs. It is attributed to the increasing in band gap resulted by the incorporation of Sr2+ ions into PbSe QDs. These two kinds of QDs were excited by the laser with the wavelengths of 1319 and 1532 nm. When rising the pumping intensity up to 1000 mW, the PL intensity from Sr2+‐doped PbSe QDs monotonically increased, while, the PL intensity from PbSe QDs reached maximum at pumping intensity at ~200 mW (λex = 1319 nm) and ~300 mW (λex = 1532 nm). The good resistance to photodarkening of Sr2+‐doped PbSe QDs is indicated passivation effect on the surface defects from Sr2+ ions doping. For Sr2+‐doped PbSe QDs the anti‐Stokes photoluminescence (ASPL) were observed when using both 1319 and 1532 nm excitation. The integrated intensity of the ASPL is linear with the excitation intensity, which indicates that the ASPL belongs to the phonon‐assisted one‐photon process. And the ASPL intensity as a function of excitation intensity shows a size dependence of the QDs. [ABSTRACT FROM AUTHOR]

CsPbBr3−xIx quantum dots were precipitated in boro‐germanate glasses with various Br/I ratios by the melt‐quenching method. When the heat treatment temperature (TH) increased from 480 to 550°C, more I− entered the perovskite crystal lattice, resulting in lattice expansion, the X‐ray diffraction peaks of CsPbBr1.5I1.5 glasses shifted to small angles. The high concentration of I− entered into the perovskite crystal lattice, decreasing the bandgap. The photoluminescence (PL) peaks of CsPbBr1.5I1.5 glasses redshifted from 577 to 620 nm, the PL peaks of CsPbBrI2 glasses shifted from 614 to 636 nm, and the PL peaks of CsPbBr0.5I2.5 glasses shifted from 650 to 672 nm. As the ratio of Br/I reduced from 2.5/0.5 to 0.5/2.5, the PL lifetime of CsPbBr3−xIx glass increased from 2.08 to 74.5 ns. With the delay time from 1 to 1500 ps, the carriers gradually accumulated in the band‐edge state, and the bleaching signal intensity increased. Then more and more carriers returned to the ground state through radiative or nonradiative recombination, the bleaching signal intensity decreased. [ABSTRACT FROM AUTHOR]

Lead chalcogenide quantum dots have particular optoelectronic properties induced by the quantum confinement effects and have promising potentials towards applications in infrared spectral range. Modulation of the optoelectronic properties of lead chalcogenide quantum dots is mainly based on the thermal treatment. In this work, precipitation and optical properties of alloyed PbSe x S 1-x quantum dots in glasses are investigated. Composition, size, absorption, and photoluminescence properties of PbSe x S 1-x quantum dots are modulated by chalcogen elements in glasses and thermal treatment. By adjusting the concentration of ZnSe and ZnS in the glasses, average diameters of the PbSe x S 1-x quantum dots are tuned in the range of 8.1–16.1 nm, their absorption peak wavelengths are tuned in the range of 724–2497 nm, and photoluminescence bands are tuned in the range of 1016–2165 nm with full width at half maximum in the range of 167–517 nm. Fraction of Se in the PbSe x S 1-x quantum dots precipitated in glasses is dependent on the concentrations of ZnSe and ZnS in the glass and heat-treatment temperature. Increase in concentration of S in the glasses results in the reduction of relative fraction of Se in the PbSe x S 1-x quantum dots formed in glasses. More importantly, high heat-treatment temperature promotes the enrichment of Se in PbSe x S 1-x quantum dots, and Se fraction in PbSe x S 1-x quantum dots increases from 0.69 to 0.89, from 0.53 to 0.85, from 0.47 to 0.79, and from 0.45 to 0.76 for those precipitated in glasses with ZnSe/(ZnSe+ZnS) molar ratios of 0.545, 0.375, 0.286, and 0.231, respectively. Increase in ZnSe/(ZnSe+ZnS) molar ratios in glasses also leads to reduction in diameter of PbSe x S 1-x quantum dots formed in glasses. These alloyed PbSe x S 1-x quantum dots also exhibit improved photoluminescence quantum yields and enhanced resistance to thermal quenching of photoluminescence. [Display omitted] [ABSTRACT FROM AUTHOR]