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We synthesized a combinatorial library of CuxNi1−x alloy thin films via co-sputtering from Cu and Ni targets to catalyze graphene chemical vapor deposition. The alloy morphology, composition, and microstructure were characterized via scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), and X-ray diffraction (XRD), respectively. Subsequently, the CuxNi1−x alloy thin films were used to grow graphene in a CH4-Ar-H2 ambient at atmospheric pressure. The underlying rationale is to adjust the CuxNi1−x composition to control the graphene. Energy dispersive x-ray spectroscopy (EDS) analysis revealed that a continuous gradient of CuxNi1−x (25 at. % < x < 83 at.%) was initially achieved across the 100 mm diameter substrate (~0.9%/mm composition gradient). The XRD spectra confirmed a solid solution was realized and the face-centered cubic lattice parameter varied from ~3.52 to 3.58 A ˙ , consistent with the measured composition gradient, assuming Vegard's law. Optical microscopy and Raman analysis of the graphene layers suggest single layer growth occurs with x > 69 at.%, bilayer growth dominates from 48 at.% < x < 69 at.%, and multilayer (≥3) growth occurs for x < 48 at.%, where x is the Cu concentration. Finally, a large area of bi-layer graphene was grown via a CuxNi1−x catalyst with optimized catalyst composition and growth temperature. [ABSTRACT FROM AUTHOR]

Focused electron beam induced deposition (FEBID) is a direct write technique for depositing materials on a support substrate akin to 3D printing with an electron beam (e‐beam). Opportunities exist for merging this existing technique with aberration‐corrected scanning transmission electron microscopy to achieve molecular‐ or atomic‐level spatial precision. Several demonstrations have been performed using graphene as the support substrate. A common challenge that arises during this process is e‐beam‐induced hydrocarbon deposition, suggesting greater control over the sample environment is needed. Various strategies exist for cleaning graphene in situ. One of the most effective methods is to rapidly heat to high temperatures, for example, 600℃ or higher. While this can produce large areas of what appears to be atomically clean graphene, mobile hydrocarbons can still be present on the surfaces. Here, we show that these hydrocarbons are primarily limited to surface migration and demonstrate an effective method for interrupting the flow using e‐beam deposition to form corralled hydrocarbon regions. This strategy is effective for maintaining atomically clean graphene at high temperatures where hydrocarbon mobility can lead to substantial accumulation of unwanted e‐beam deposition. [ABSTRACT FROM AUTHOR]

Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene - Direct-Write Kirigami Patterns. The authors (O.D. and S.J.) acknowledge support by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division. 1 Zhang C., Dyck O., Garfinkel D.A., Stanford M.G., Belianinov A.A., Fowlkes J.D., Jesse S., Rack P.D. Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene - Direct-Write Kirigami Patterns. [Extracted from the article]

A helium gas field ion source has been demonstrated to be capable of realizing higher milling resolution relative to liquid gallium ion sources. One drawback, however, is that the helium ion mass is prohibitively low for reasonable sputtering rates of bulk materials, requiring a dosage that may lead to significant subsurface damage. Manipulation of suspended graphene is, therefore, a logical application for He+ milling. We demonstrate that competitive ion beam-induced deposition from residual carbonaceous contamination can be thermally mitigated via a pulsed laser-assisted He+ milling. By optimizing pulsed laser power density, frequency, and pulse width, we reduce the carbonaceous byproducts and mill graphene gaps down to sub 10 nm in highly complex kiragami patterns. [ABSTRACT FROM AUTHOR]

Electron-beam (e-beam) manipulation of single dopant atoms in an aberration-corrected scanning transmission electron microscope is emerging as a method for directed atomic motion and atom-by-atom assembly. Until now, the dopant species have been limited to atoms closely matched to carbon in terms of ionic radius and capable of strong covalent bonding with carbon atoms in the graphene lattice. In situ dopant insertion into a graphene lattice has thus far been demonstrated only for Si, which is ubiquitously present as a contaminant in this material. Here, we achieve in situ manipulation of Pt atoms and their insertion into the graphene host matrix using the e-beam deposited Pt on graphene as a host system. We further demonstrate a mechanism for stabilization of the Pt atom, enabled through the formation of Si-stabilized Pt heteroatomic clusters attached to the graphene surface. This study provides evidence toward the universality of the e-beam assembly approach, opening a pathway for exploring cluster chemistry through direct assembly. Image 1 [ABSTRACT FROM AUTHOR]

Atomic-scale fabrication is an outstanding challenge and overarching goal for the nanoscience community. The practical implementation of moving and fixing atoms to a structure is non-trivial considering that one must spatially address the positioning of single atoms, provide a stabilizing scaffold to hold structures in place, and understand the details of their chemical bonding. Free-standing graphene offers a simplified platform for the development of atomic-scale fabrication and the focused electron beam in a scanning transmission electron microscope can be used to locally induce defects and sculpt the graphene. In this scenario, the graphene forms the stabilizing scaffold and the experimental question is whether a range of dopant atoms can be attached and incorporated into the lattice using a single technique and, from a theoretical perspective, we would like to know which dopants will create technologically interesting properties. Here, we demonstrate that the electron beam can be used to selectively and precisely insert a variety of transition metal atoms into graphene with highly localized control over the doping locations. We use first-principles density functional theory calculations with direct observation of the created structures to reveal the energetics of incorporating metal atoms into graphene and their magnetic, electronic, and quantum topological properties. • Electron beam manipulation used to insert a broad range of dopants into graphene. • Scanning transmission electron microscope allows high spatial control. • Density functional theory applied to a large block of the periodic table. • Electronic band gaps, magnetic moments, and non-trivial band topology are examined. [ABSTRACT FROM AUTHOR]

Thin-film dewetting can be exploited to self-assemble and organize nanoparticles. Crucial to this effort is the understanding of the nanoscale liquid phase dynamics, and molecular dynamics simulations (MD) provide a powerful tool in this respect. In this paper we demonstrate that MD simulations utilizing a Lennard-Jones (LJ) interface potential can be effectively used to study various wetting regimes of nanoscale Cu disks on graphite. It was found that both the dewetting velocity and the equilibrium contact angle increase with a decrease in the Cu-C potential, and that the retraction velocities obtained are characteristic of dewetting phenomena governed by inertial and capillary forces. This phenomena leads to a change in morphology, from disks to nanodroplets, which, in turn, when using the most accurate LJ potential, jump off the graphitic substrate with a velocity on the order of 140 m/s. This ejection velocity is consistent with the previous experimental observation that nanoscale Au triangles deposited on graphite or glass jump when exposed to a pulsed laser above the melting threshold. Interestingly, the Cu ejection velocity decreases when the liquid Cu disks are deposited on a suspended graphene membrane. Finally, a Rayleigh-Plateau-like instability, which leads to the breakup of a pseudo-one-dimensional liquid Cu nanowire in nanodroplets, is revealed when the MD simulations are performed using different LJ interface potentials. [ABSTRACT FROM AUTHOR]