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Abstract: This study reports successful deposition of high quantum efficiency (QE) bialkali antimonide K2CsSb photocathodes on graphene films. The results pave the way for an ultimate goal of encapsulating technologically relevant photocathodes for accelerator technology with an atomically thin protecting layer to enhance lifetime while minimizing QE losses. A QE of 17% at ≈3.1 eV (405 nm) is the highest value reported so far on graphene substrates and is comparable to that obtained on stainless steel and nickel reference substrates. The spectral responses of the photocathodes on graphene exhibit signature features of K2CsSb including the characteristic absorption at ≈2.5 eV. Materials characterization based on X‐ray fluorescence and X‐ray diffraction reveals that the composition and crystal quality of these photocathodes deposited on graphene is comparable to those deposited on a reference substrate. Quantitative agreement between optical calculations and QE measurements for the K2CsSb on free suspended graphene and a graphene‐coated metal substrate further confirms the high‐quality interface between the photocathodes and graphene. Finally, a correlation between the QE and graphene quality as characterized by Raman spectroscopy suggests that a lower density of atomistic defects in the graphene films leads to higher QE of the deposited K2CsSb photocathodes. [ABSTRACT FROM AUTHOR]

We report valence-band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. The degree of oxygen functionalization was controlled by annealing temperature, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in the density of states around the Fermi level upon thermal annealing at ∼600 °C. The result indicates that while there is an apparent bandgap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of bandgap closure was correlated with the electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ∼500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to an as-synthesized counterpart. [ABSTRACT FROM AUTHOR]

Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop ultrabarriers that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication schemes (i.e., must be solution processable, deposited at room temperature and be chemically inert). Here, a lifetime increase of 1300 h for poly(3-hexylthiophene) (P3HT) films encapsulated by uniform and continuous thin (≈10 nm) films of reduced graphene oxide (rGO) is reported. This level of protection against oxygen/water vapor diffusion is substantially better than conventional polymeric barriers such as Cytop, which degrades after only 350 h despite being 400 nm thick. Analysis using atomic force microscopy, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy suggest that the superior oxygen gas/moisture barrier property of rGO is due to the close interlayer distance packing and absence of pinholes within the impermeable sheets. These material properties can be correlated to the enhanced lag time of 500 h. The results provide new insight for the design of high-performance and solution-processable transparent ultrabarriers for a wide range of encapsulation applications. [ABSTRACT FROM AUTHOR]