1. Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices.
- Author
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Rodriguez-Fernandez, Alberto, Aldana, Samuel, Campabadal, Francesca, Sune, Jordi, Miranda, Enrique, Jimenez-Molinos, Francisco, Roldan, Juan Bautista, and Gonzalez, Mireia Bargallo
- Subjects
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NONVOLATILE random-access memory , *CURRENT-voltage characteristics , *HAFNIUM oxide , *DIELECTRICS , *SEMICONDUCTOR electrodes , *SCHOTTKY barrier , *MEMRISTORS - Abstract
The impact of the dielectric thickness, forming polarity, and current compliance on the self-rectifying current–voltage ( I – V ) characteristics of Ni/HfO2/n+-Si resistive random access memory (RRAM) devices was investigated. The obtained results indicate that these three aspects not only play a role in the postforming currents but also affect the switching properties of the devices. In the case of 5-nm-thick oxide devices, a self-rectifying ratio of about three orders or magnitude is observed after substrate injection forming (SIF) with current compliance below 500 $\mu$ A. However, similar devices subjected to gate injection forming (GIF) do not exhibit such rectifying feature. This distinctive behavior for SIF is ascribed to the formation of a Schottky-like contact in between the Ni-based conducting filament and the semiconductor electrode. For 20-nm-thick oxide devices, the forming voltage under GIF and the subsequent dielectric degradation are higher than for thinner oxide layers, resulting in a less resistive state, and a negligible role of the referred Schottky barrier. The effect of the temperature on the diffusion of the Ni ions that form the conducting path is also discussed. [ABSTRACT FROM PUBLISHER]
- Published
- 2017
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