Search

A distributed charge storage with Ni nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5 nm and 3.9×1012/cm2, respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1 V threshold voltage shift under 4 V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 106 write/erase cycles. [ABSTRACT FROM AUTHOR]

In this Letter, the characteristics of set process of hafnium oxide based resistance random access memory are investigated by different set processes with increasing compliance current. Through current fitting, carrier conduction mechanism of low resistance state changes from hopping to surface scattering and finally to ohmic conduction with the increase of setting compliance current. Experimental data of current-voltage measurement under successive increasing temperature confirms the conduction mechanism transition. A model of filament growth is eventually proposed in a way by merging discrete metal precipitates and electrical field simulation by comsol Multiphysics further clarifies the properties of filament growth process. [ABSTRACT FROM AUTHOR]