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Mixed‐halide perovskites offer ideal bandgaps for tandem solar cells, but photoinduced halide segregation compromises photovoltaic device performance. This study explores the influence of a hole‐transport layer, necessary for a full device, by monitoring halide segregation through in situ, concurrent X‐ray diffraction and photoluminescence measurements to disentangle compositional and optoelectronic changes. This work demonstrates that top coating FA0.83Cs0.17Pb(Br0.4I0.6)3 perovskite films with a poly(triaryl)amine (PTAA) hole‐extraction layer surprisingly leads to suppression of halide segregation because photogenerated charge carriers are rapidly trapped at interfacial defects that do not drive halide segregation. However, the generation of iodide‐enriched regions near the perovskite/PTAA interface enhances hole back‐transfer from the PTAA layer through improved energy level offsets, increasing radiative recombination losses. It is further found that while passivation with a piperidinium salt slows halide segregation in perovskite films, the addition of a PTAA top‐coating accelerates such effects, elucidating the specific nature of trap types that are able to drive the halide segregation process. This work highlights the importance of selective passivation techniques for achieving efficient and stable wide‐bandgap perovskite photovoltaic devices. [ABSTRACT FROM AUTHOR]

Mixed‐halide perovskites are essential for use in all‐perovskite or perovskite–silicon tandem solar cells due to their tunable bandgap. However, trap states and halide segregation currently present the two main challenges for efficient mixed‐halide perovskite technologies. Here photoluminescence techniques are used to study trap states and halide segregation in full mixed‐halide perovskite photovoltaic devices. This work identifies three distinct defect species in the perovskite material: a charged, mobile defect that traps charge‐carriers in the perovskite, a charge‐neutral defect that induces halide segregation, and a charged, mobile defect that screens the perovskite from external electric fields. These three defects are proposed to be MA+ interstitials, crystal distortions, and halide vacancies and/or interstitials, respectively. Finally, external quantum efficiency measurements show that photoexcited charge‐carriers can be extracted from the iodide‐rich low‐bandgap regions of the phase‐segregated perovskite formed under illumination, suggesting the existence of charge‐carrier percolation pathways through grain boundaries where phase‐segregation may occur. [ABSTRACT FROM AUTHOR]