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Atomically thin circuits have recently been explored for applications in nextgeneration electronics and optoelectronics and have been demonstrated with 2D lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, tunable transport behavior is reported which is introduced into single layer tungsten diselenide and tungsten disulfide by focused He+ irradiation. Pseudometallic behavior is induced by irradiating the materials with a dose of ≈1 x 1016 He+ cm-2 to introduce defect states, and subsequent temperaturedependent transport measurements suggest a nearest neighbor hopping mechanism is operative. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal that Se is sputtered preferentially, and extended percolating networks of edge states form within WSe2 at a critical dose of 1 x 1016 He+ cm-2. First-principle calculations confirm the semiconductor- to-metallic transition of WSe2 after pore and edge defects are introduced by He+ irradiation. The hopping conduction is utilized to direct-write resistor loaded logic circuits in WSe2 and WS2 with a voltage gain of greater than 5. Edge contacted thin film transistors are also fabricated with a high on/off ratio (>106), demonstrating potential for the formation of atomically thin circuits. [ABSTRACT FROM AUTHOR]

Focused ion beam nanoscale synthesis has emerged as a critical tool for selected area nanofabrication. Helium and neon ion beams from the gas field ion source have recently demonstrated unparalleled resolution among other scanning ion beams. In this review, the authors focus on the nanoscale synthesis applications for these ion species which have been demonstrated to date. The applications and recent work can broadly be grouped into the following categories: (1) Monte Carlo simulations, (2) direct-write milling or sputtering, (3) ion beam lithography, (4) selective ion implantation or defect introduction and (5) gas-assisted processing. A special emphasis is given toward using He+ and Ne+ for the processing of two dimensional materials, as several groups have demonstrated promising results. Finally, the authors will discuss the future outlook of He+ and Ne+ nanoprocessing techniques and applications. [ABSTRACT FROM AUTHOR]

The next generation optical, electronic, biological, and sensing devices as well as platforms will inevitably extend their architecture into the 3rd dimension to enhance functionality. In focused ion beam induced deposition (FIBID), a helium gas field ion source can be used with an organometallic precursor gas to fabricate nanoscale structures in 3D with high-precision and smaller critical dimensions than focused electron beam induced deposition (FEBID), traditional liquid metal source FIBID, or other additive manufacturing technology. In this work, we report the effect of beam current, dwell time, and pixel pitch on the resultant segment and angle growth for nanoscale 3D mesh objects. We note subtle beam heating effects, which impact the segment angle and the feature size. Additionally, we investigate the competition of material deposition and sputtering during the 3D FIBID process, with helium ion microscopy experiments and Monte Carlo simulations. Our results show complex 3D mesh structures measuring ~300 nm in the largest dimension, with individual features as small as 16 nm at full width half maximum (FWHM). These assemblies can be completed in minutes, with the underlying fabrication technology compatible with existing lithographic techniques, suggesting a higher-throughput pathway to integrating FIBID with established nanofabrication techniques. [ABSTRACT FROM AUTHOR]

Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene - Direct-Write Kirigami Patterns. The authors (O.D. and S.J.) acknowledge support by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division. 1 Zhang C., Dyck O., Garfinkel D.A., Stanford M.G., Belianinov A.A., Fowlkes J.D., Jesse S., Rack P.D. Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene - Direct-Write Kirigami Patterns. [Extracted from the article]

A helium gas field ion source has been demonstrated to be capable of realizing higher milling resolution relative to liquid gallium ion sources. One drawback, however, is that the helium ion mass is prohibitively low for reasonable sputtering rates of bulk materials, requiring a dosage that may lead to significant subsurface damage. Manipulation of suspended graphene is, therefore, a logical application for He+ milling. We demonstrate that competitive ion beam-induced deposition from residual carbonaceous contamination can be thermally mitigated via a pulsed laser-assisted He+ milling. By optimizing pulsed laser power density, frequency, and pulse width, we reduce the carbonaceous byproducts and mill graphene gaps down to sub 10 nm in highly complex kiragami patterns. [ABSTRACT FROM AUTHOR]

We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La0.7Sr0.3MnO3 thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100 °C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. The ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials' functional properties. [ABSTRACT FROM AUTHOR]

Nanoporous materials are key components in a vast number of applications from energy to drug delivery and to agriculture. However, the number of ways to analytically quantify the salient features of these materials, for example: surface structure, pore shape, and size, remain limited. The most common approach is gas absorption, where volumetric gas absorption and desorption are measured. This technique has some fundamental drawbacks such as low sample throughput and a lack of direct surface visualization. In this work, we demonstrate Helium Ion Microscopy (HIM) as a tool for imaging and quantification of pores in industrially relevant SiO2 catalyst supports. We start with the fundamental principles of ion-sample interaction, and build on this knowledge to experimentally observe and quantify surface pores by using the HIM and image data analytics. We contrast our experimental results to gas absorption and demonstrate full statistical agreement between two techniques. The principles behind the theoretical, experimental, and analytical framework presented herein offer an automated framework for visualization and quantification of pore structures in a wide variety of materials. [ABSTRACT FROM AUTHOR]