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Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted much attention due to their unique properties in photocatalysis, electronics, and energy storage. This work comprehensively analyzed the electronic properties and photocatalytic efficiency properties of 2D vdW MoS2/Hf2CO2 heterostructure by first-principles calculations and molecular dynamics simulation. An ideal band gap of 1.44 eV was found for visible light absorption. Meanwhile, a high solar-to-hydrogen efficiency of 17.14% is obtained from the calculated band-edge positions, and a high power conversion efficiency of 13.84% is also confirmed by spectroscopy limited maximum efficiency simulation. We estimate the time scale for electron–hole transfer and recombination times using a combination of non-adiabatic molecular dynamics and time-dependent density functional theory. A suitable e-h recombination time of 1.86 ns and electron (hole) transfer time of 331 (978) fs are obtained in the 2D MoS2/Hf2CO2 heterostructure, which is expected to ensure high photocatalytic efficiency. Therefore, the constructed MoS2/Hf2CO2 heterostructures provide a new example for the prediction of high-performance nano optoelectronic devices. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted much attention due to their unique properties in photocatalysis, electronics, and energy storage. This work comprehensively analyzed the electronic properties and photocatalytic efficiency properties of 2D vdW MoS2/Hf2CO2 heterostructure by first-principles calculations and molecular dynamics simulation. An ideal band gap of 1.44 eV was found for visible light absorption. Meanwhile, a high solar-to-hydrogen efficiency of 17.14% is obtained from the calculated band-edge positions, and a high power conversion efficiency of 13.84% is also confirmed by spectroscopy limited maximum efficiency simulation. We estimate the time scale for electron–hole transfer and recombination times using a combination of non-adiabatic molecular dynamics and time-dependent density functional theory. A suitable e-h recombination time of 1.86 ns and electron (hole) transfer time of 331 (978) fs are obtained in the 2D MoS2/Hf2CO2 heterostructure, which is expected to ensure high photocatalytic efficiency. Therefore, the constructed MoS2/Hf2CO2 heterostructures provide a new example for the prediction of high-performance nano optoelectronic devices. [ABSTRACT FROM AUTHOR]

Abstract: Li-doped p-type ZnO thin films were grown by using radio frequency magnetron sputtering. In our experiment, ZnO targets were fabricated by using the Li-doped ZnO powders that had been synthesized by glycine (urea)–nitrate combustion process. The structural characteristics of ZnO thin films were examined by XRD and SEM. The results showed that ZnO films possess a good crystalline with c-axis orientation, uniform thickness and dense surface. Current–voltage properties of p-ZnO:Li/n-Si structure had been examined in an effort to delineate the carrier type behavior in ZnO semiconductor. p-ZnO:Li/n-Si heterojunctions displayed rectifying behavior. As a result I–V measurements exhibited a polarity consistent with the Li-doped ZnO being p-type. [Copyright &y& Elsevier]