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Abstract: Compatibility and thermal stability of the metal-oxide-semiconductor (MOS) device with HfO x N y gate dielectric and Hf x Ta y N metal gate electrode were investigated. MOS device formed by Hf x Ta y N metal gate and HfO x N y gate dielectric shows excellent thermal stability. Compared to the TaN metal gate, Hf x Ta y N metal gate shows an enhancement in thermal stability and electrical characteristics, such as equivalent oxide thickness (EOT), hysteresis, interface trap density, stress-induced leakage current and stress-induced flatband voltage shift. With an increase in post metallization annealing (PMA) temperature, the electrical characteristics remain almost unchanged, which, in turn, demonstrate the excellent thermal stability and electrical reliabilities of the MOS device with HfO x N y gate dielectric and Hf x Ta y N metal gate. [Copyright &y& Elsevier]

Abstract: Interaction of Hf x Ta y N metal gate with SiO2 and HfO x N y gate dielectrics has been extensively studied. Metal-oxide-semiconductor (MOS) device formed with SiO2 gate dielectric and Hf x Ta y N metal gate shows satisfactory thermal stability. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) analysis results show that the diffusion depths of Hf and Ta are less significant in SiO2 gate dielectric than that in HfO x N y . Compared to HfO x N y gate dielectric, SiO2 shows better electrical properties, such as leakage current, hysteresis, interface trap density and stress-induced flat-band voltage shift. With an increase in post metallization annealing (PMA) temperature, the electrical characteristics of the MOS device with SiO2 gate dielectric remain almost unchanged, indicating its superior thermal and electrical stability. [Copyright &y& Elsevier]