1. Origin of the near-room temperature resistance transition in lutetium with H2/N2 gas mixture under high pressure.
- Author
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Peng, Di, Zeng, Qiaoshi, Lan, Fujun, Xing, Zhenfang, Zeng, Zhidan, Ke, Xiaoxing, Ding, Yang, and Mao, Ho-kwang
- Subjects
HIGH temperature superconductivity ,GAS mixtures ,CHEMICAL processes ,DIAMOND anvil cell ,LUTETIUM - Abstract
The recent report of room-temperature superconductivity at near-ambient pressure in nitrogen-doped lutetium hydride (Lu-H-N) by Dasenbrock-Gammon et al. [ Nature 615, 244โ250 (2023)] has attracted tremendous attention due to its anticipated great impact on technology. However, the results could not be independently reproduced by other groups worldwide in follow-up studies, which elicited intense controversy. Here, we develop a reliable experimental protocol to minimize the extensively concerned extrinsic influences on the sample by starting the reaction from pure lutetium loaded with an H
2 /N2 gas mixture in a diamond anvil cell under different pressures and temperatures and simultaneously monitoring the entire chemical reaction process using in situ four-probe resistance measurements. Therefore, we could repeatedly reproduce the near-room temperature upsurge of electrical resistance at a relatively early stage of the chemical reaction. However, the mechanism is suggested to be a metal-to-semiconductor/insulator transition associated with the structural modulation in the non-stoichiometric Lu-H-N, rather than superconductivity. [ABSTRACT FROM AUTHOR]- Published
- 2024
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