1. Counter-Doped JTE, an Edge Termination for HV SiC Devices With Increased Tolerance to the Surface Charge.
- Author
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Huang, Chih-Fang, Hsu, Hua-Chih, Chu, Kuan-Wei, Lee, Li-Heng, Tsai, Ming-Jinn, Lee, Kung-Yen, and Zhao, Feng
- Subjects
COMPUTER simulation ,BREAKDOWN voltage ,ELECTRIC breakdown ,ELECTRIC conductivity ,SURFACE charges ,ELECTRIC charge ,SURFACE charging - Abstract
In this paper, a comparison of different techniques for SiC high-voltage devices is performed using numerical simulations. In particular, the method of counter doping (CD) introduced in the junction termination extension (JTE) region to create a multizone termination effect is investigated. Simulation shows that compared with the other edge termination techniques, CD-JTE greatly reduces the sensitivity of breakdown voltage (BV) to JTE doses and surface charges. The multizone CD-JTE with outer rings shows that for a 30- \mu m thick epi-layer, 90% of the theoretical BV is achievable with a wide tolerance of 11\,\times \,10^{\mathrm {12}} /cm ^{2} to the JTE dose and 85% of the theoretical BV with an increased tolerance of 6.19\times 10^\mathrm 12 /cm ^2 to the positive surface charges, both superior to other JTE structures investigated in this paper. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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