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Your search keyword '"Nasadoski, Jeffrey"' showing total 2 results
Start Over Author "Nasadoski, Jeffrey" Topic high voltage
2 results on '"Nasadoski, Jeffrey"'

1. Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules.

Author

Elasser, Ahmed, Agamy, Mohammed, Nasadoski, Jeffrey, Bolotnikov, Alexander, Stum, Zachary, Raju, Ravi, Stevanovic, Ljubisa, Mari, Jorge, Menzel, Matthias, Bastien, Bertrand, and Losee, Peter

Abstract

High voltage and high current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6×6mm2 SiC chips that are fabricated on 3″ SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high voltage, high frequency applications, as well as antiparallel diodes for 6.5kV IGBTs, IGCTs, and IEGTs. [ABSTRACT FROM PUBLISHER]

Published
2012
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2. Static and Dynamic Characterization of 6.5-kV 100-A SiC Bipolar PiN Diode Modules.

Author

Elasser, Ahmed, Agamy, Mohammed S., Nasadoski, Jeffrey, Losee, Peter A., Bolotnikov, Alexander V., Stum, Zachary, Raju, Ravisekhar, Stevanovic, Ljubisa, Mari, Jorge, Menzel, Matthias, and Bastien, Bertrand

Subjects
PIN diodes, STATICS, DYNAMICS, SILICON carbide, SWITCHING circuits, BIPOLAR transistors
Abstract

High-voltage and high-current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6 \times 6\ \mm^2 SiC chips that are fabricated on 3-in SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high-voltage high-frequency applications as well as antiparallel diodes for 6.5-kV insulated gate bipolar transistors, insulated gate commutated thyristors, and injection enhanced insulated gate bipolar transistors. [ABSTRACT FROM AUTHOR]

Published
2014
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