1. Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO 2 /TaOx/TaN Devices.
- Author
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Park, Minsu, Jeon, Beomki, Park, Jongmin, and Kim, Sungjun
- Subjects
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MEMRISTORS , *NOCICEPTORS , *SENSORY receptors , *SENSORY neurons , *ARTIFICIAL intelligence , *HYPERALGESIA - Abstract
As artificial intelligence technology advances, it is necessary to imitate various biological functions to complete more complex tasks. Among them, studies have been reported on the nociceptor, a critical receptor of sensory neurons that can detect harmful stimuli. Although a complex CMOS circuit is required to electrically realize a nociceptor, a memristor with threshold switching characteristics can implement the nociceptor as a single device. Here, we suggest a memristor with a Pt/HfO2/TaOx/TaN bilayer structure. This device can mimic the characteristics of a nociceptor including the threshold, relaxation, allodynia, and hyperalgesia. Additionally, we contrast different electrical properties according to the thickness of the HfO2 layer. Moreover, Pt/HfO2/TaOx/TaN with a 3 nm thick HfO2 layer has a stable endurance of 1000 cycles and controllable threshold switching characteristics. Finally, this study emphasizes the importance of the material selection and fabrication method in the memristor by comparing Pt/HfO2/TaOx/TaN with Pt/TaOx/TaN, which has insufficient performance to be used as a nociceptor. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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