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2. The Influence of Oxygen Partial Pressure on Growth of the (Hg,Re)-1223 Intergrain Junction.

Author

Oliveira, F. D. C., Passos, C. A. C., Fardin, J. F., Simonetti, D. S. L., Passamai Jr., J. L., Belich, H., de Medeiros, E. F., Orlando, M. T. D., and Ferreira Jr., M. M.

Subjects
*THERMOELECTRICITY, *POLYCRYSTALLINE semiconductors, *CRITICAL currents, *ELECTRIC currents, *SUPERCONDUCTORS, *X-ray diffraction, *SEMICONDUCTOR doping, *SUPERCONDUCTIVITY
Abstract

Hg0.82Re0.18Ba2Ca2Cu3O8+δ polycrystalline samples were successfully obtained by using different oxygen partial pressure in the annealing treatment of the precursor ceramic. The doping state was confirmed by X-ray powder diffraction pattern analysis and by observing distinct thermopower values at room temperature. Also, the intergrain regions have shown an improvement in the critical current density when using the precursor preparation with 10% O2 and 90% Ar (optimal doped). The optimal doped sample has presented the highest α exponent of the Jc 221D [1 - (T/Tc)2]α dependence. For the case of (Hg,Re)-1223 polycrystalline superconductor applications, the α exponent can be used as a junction quality parameter. [ABSTRACT FROM AUTHOR]

Published
2006
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