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The current study investigates GaN-based light-emitting diodes (LEDs) with InGaN/GaN/InGaN multi-layer barrier (MLB). Simulation results show that GaN-based LEDs with MLB have better performance than conventional GaN-based LEDs with only one GaN barrier because of the enhancement in hole injection into the quantum well and decrease in electron leakage current. [ABSTRACT FROM AUTHOR]

Blue InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with the conventional AlGaN and AlGaN-GaN-AlGaN (AGA) electron blocking layer (EBL) are investigated numerically. The simulation results show that the LEDs with the AGA EBL exhibit much higher output power and smaller efficiency droop at high current as compared to those with the conventional EBL due to the enhancement of the electron confinement and improvement of the hole injection from p-type region, which are induced by the strong electrostatic fields and tunneling effect in the AGA EBL. [ABSTRACT FROM AUTHOR]